WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol Value Units Drain Source Voltage 60 V Continuous Drain Current(@Tc=25℃) 20 A Continuous Drain Current(@Tc=100℃) 13 A IDM Drain Current Pulsed tp=10us 76 A V GS Gate to Source Voltage-Continuous ±20 V V GS Gate to Source Voltage-Non-Repetitive(tp<10us) ±30 V E AS Single Pulsed Avalanche Energy 18 mJ V DSS ID Parameter (Note 2) Is Source Current (Body Diode) 20 A PD Total Power Dissipation(@Tc=25℃) 36 W TJ, Tstg Junction and Storage Temperature -55~150 ℃ 260 ℃ TL Channel Temperature(1/8” from case for 10s) Thermal Characteristics Value Symbol Parameter R QJC Thermal Resistance, Junction-to-Case - 3.5 - ℃/W R QJA Thermal Resistance, Junction-to-Ambient - 45 - ℃/W Min Typ Rev.A Nov.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Max Units WFD20N06 Electrical Characteristics (Tc = 25℃) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Symbol IGSS V(BR)GSS IDSS Drain−source breakdown voltage V(BR)DSS Break Voltage Temperature ΔBV DSS / ΔT J Coefficient Test Condition Min Type Max Unit - - ±100 nA 60 - - V VDS=100V, VGS=0V, Tc = 25°C - - 1.0 μA VDS=100V, VGS =0V,Tc= 125°C - - 100 μA 60 - - V - 60 - mV/℃ 1.0 1.8 3.0 V VGS = ±20 V, VDS = 0 V IG = 250μA, VDS = 0 V ID = 250 μA, VGS = 0 V ID=250μA,Referenced to25℃ Gate threshold voltage VGS(th) VDS = V GS, ID =250 μA Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 10A - 26 39 mΩ Forward Transconductance gfs VDS = 15 V, ID = 10A - 8.0 - S Input capacitance C iss VDS = 25 V, - 675 Reverse transfer capacitance C rss VGS = 0 V, - 47 Output capacitance C oss f = 1 MHz - 68 VDD =48 - 12.6 VDS = 10V - 6.5 - 2.4 - 18.2 - 7.6 - 2.2 - - 4.3 - Rise time Switching time Turn−on time Fall time Turn−off time Total gate charge (gate−source tr ton tf toff Qg plus gate−drain) ID =20A RG=2.5Ω VDs =48V VGS =10V Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID =20A pF ns nC Source−Drain Ratings and Characteristics (Ta = 25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 20 A Pulse drain reverse current IDRP - - - 76 A Forward voltage (diode) VDSF IDR = 10A, VGS = 0 V - 0.87 1.2 V Reverse recovery time trr IDR = 1A, V GS = 0 V, - 17 - ns Reverse recovery charge Q rr dIDR / dt = 100 A / μs - 12 - μC Note 1. Surface−mounted on FR4 board using 1 in sq pad size(Cu area = 1.127 in sq [2 oz] including traces. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. This transistor is an electrostatic sensitive device, Please handle with caution 2/6 Steady, keep you advance WFD20N06 TYPICAL PERFORMANCE CURVES 3/6 Steady, keep you advance WFD20N06 4/6 Steady, keep you advance WFD20N06 5/6 Steady, keep you advance WFD20N06 TO-252 Package Dimension Unit:mm E A F D D1 E1 H A1 L2 b e c 符号 symbol MIN MAX A 2 . 19 2 . 38 A1 - 0 . 13 b 0.64 c 0 . 46 0 . 61 D 5 . 97 6 . 22 D1 0 . 89 1 . 27 E 6 . 35 6 . 73 E1 5 . 21 5 . 46 e θ L 0. 89 2 . 28TYP F 0 . 46 0 . 61 H 9 . 65 10. 41 L 1 . 40 1 . 78 L2 0 . 64 1 . 01 θ 。 0 8 。 6/6 Steady, keep you advance