IC IC MOSFET SMDType Type DIP Product specification 40P03 TO-220 (8.70) 2.80 ±0.10 (1.70) ● V DS (V) =-30V,ID =-30 A 4.50 ±0.20 9.90 ±0.20 1.30 ±0.10 ■ Features ø3.60 ±0.10 +0.10 1.30 –0.05 18.95MAX. (3.70) (3.00) 9.20 ±0.20 (1.46) ● RDS(ON) ＜ 50mΩ (V G S =-4.5V) 15.90 ±0.20 ● RDS(ON) ＜ 28mΩ (V G S =-10V) 1.27 ±0.10 1.52 ±0.10 1 2 3 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 (45°) D G S +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 1 GATE 2 DRAIN 3 SOURCE ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VD S -30 Gate-Source Voltage VGS ±２０ Continuous Drain Current TC=25 ℃ TC=100℃ ID I DM -120 Power Dissipation PD 31.3 Thermal Resistance.Junction- to-Ambient RthJA 110 Thermal Resistance.Junction- to-Case Rthc 4 TJ , TSTG -55 to 150 http://www.twtysemi.com [email protected] V -30 -18 Pulsed Drain Current Junction and Storage Temperature Range Unit A W ℃/W ℃ 4008-318-123 1 of 4 IC IC IC MOSFET MOSFET SMDType Type SMD Type DIP Product specification 40P03 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Testconditons ID=-250μA, V GS=0V Typ VGS =0V, -1 VDS =0V, VGS =±20V Gate Threshold Voltage VGS(th) VDS =VGS ID=-250μA Static Drain-Source On-Resistance RDS(On) -25 -1 Ciss Output Capacitance Cos s Reverse Transfer Capacitance C rs s Total Gate Charge Qg Gate Source Charge Q gs Gate Drain Charge Q gd 9 12 tr Turn-Off DelayTime td(off) VDS =-10V, ID=-18A 20 915 mΩ S 1465 pF 280 195 14 VGS=-4.5V, V DS =-24V, ID=-18A 22 nC 3 VGS=-10V, V DS =-15V, RD =0.8Ω, RG=3.3 Ω， ID=-18A 30 56 Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IS=-18A, d I/dt =-100A/ μs 30 Body Diode Reverse Recovery Charge Q rr IS=-18A, d I/dt =-100A/ μs 21 Diode Forward Voltage VSD IS=-18A,V GS =0V http://www.twtysemi.com V 50 Input Capacitance td(on) -3 28 gFS Turn-On DelayTime nA VGS=-4.5V, I D=-10A Forward Transconductance μA ±100 VGS=-10V, ID =-18A VGS=0V, V DS =-25V, f=1MHz Unit V TJ =150℃ IGSS Turn-On Rise Time Max -30 VDS =-30V, VGS =0V VDS =-24V, Gate-Body leakage current Min ns 57 [email protected] nC -1.2 4008-318-123 V 2 of 4 SMDType Type DIP IC IC MOSFET Product specification 40P03 ■ Typical Characteristics 100 120 -10V -10V T A = 25 o C TA=150oC -7.0V 80 60 -5.0V -4.5V 40 -7.0V 80 -ID , Drain Current (A) -ID , Drain Current (A) 100 60 -5.0V 40 -4.5V 20 20 V G = -3.0 V V G = -3.0 V 0 0 0 2 4 6 8 0 -V DS , Drain-to-Source Voltage (V) 4 6 8 1.6 50 I D = -10 A T C =25 ℃ I D =-1 8 A V G =-10V 1.4 40 Normalized RDS(ON) RDS(ON) (mΩ ) 2 -V DS , Drain-to-Source Voltage (V) 30 1.2 1.0 0.8 0.6 20 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) v.s. Junction Temperature 2.5 18 15 Normalized -VGS(th) (V) 2.0 -IS(A) 12 o o T j =150 C 9 T j =25 C 6 1.5 1.0 0.5 3 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , Source-to-Drain Voltage (V) http://www.twtysemi.com [email protected] -50 0 50 100 150 T j , Junction Temperature ( o C) 4008-318-123 3 of 4 IC IC MOSFET SMDType Type DIP Product specification 40P03 ■ Typical Characteristics f=1.0MHz 10000 V DS =- 24 V I D =-1 8 A 10 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 1000 C iss 4 C oss C rss 2 100 0 0 5 10 15 20 25 1 30 5 9 Q G , Total Gate Charge (nC) 17 21 25 29 1 Normalized Thermal Response (Rthjc) 1000.0 100.0 100us -ID (A) 13 -V DS , Drain-to-Source Voltage (V) 1ms 10.0 10ms 100ms 1s DC T c =25 o C Single Pulse 1.0 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) http://www.twtysemi.com [email protected] 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) 4008-318-123 4 of 4