Data Sheet 10V Drive Nch MOSFET R5019ANX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 (1) Gate (2) Drain (3) Source 0.8 2.54 2.54 2.6 0.75 (1) (2) (3) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) R5019ANX Inner circuit Bulk 500 ∗1 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS Limits Unit 500 30 V V A A A A Drain current Continuous Pulsed ID IDP *3 19 *1 Source current (Body Diode) Continuous Pulsed IS ISP *3 76 19 Avalanche current IAS *2 Avalanche energy *2 Power dissipation EAS PD Channel temperature Range of storage temperature 76 9.5 24.3 50 A mJ W Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c) Limits 2.5 Unit C / W *1 *4 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A Data Sheet R5019ANX Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 100 nA VGS=30V, VDS=0V 500 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 100 A VDS=500V, VGS=0V VGS (th) 2.5 - 4.5 V VDS=10V, ID=1mA RDS (on)* - 0.18 0.24 ID=9.5A, VGS=10V l Yfs l* 6.5 - - S VDS=10V, ID=9.5A Input capacitance Ciss - 2050 - pF VDS=25V Output capacitance Coss - 1200 - pF VGS=0V Reverse transfer capacitance Crss - 50 - pF f=1MHz Turn-on delay time td(on) * tr * - 40 - ns VDD 250V, ID=9.5A - 115 - ns VGS=10V td(off) * tf * - 165 - ns RL=26.3 - 100 - ns RG=10 Qg * Qgs * Qgd * - 55 - nC VDD 250V - 10 24 - nC nC ID=19A VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions IS=19A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet R5019ANX Electrical characteristic curves 3 14 VGS=5.0V 2 Drain Current : ID [A] 4 Ta=25℃ VGS=10.0V pulsed VGS=8.0V VGS=6.5V VGS=7.0V VGS=6.0V 16 12 10 8 VGS=5.0V 6 4 1 VGS=4.5V 0 1 Fig.4 Gate Threshold Voltage vs. Channel Temperature 0.01 2 3 4 5 6 7 8 9 10 0 6 3 2 1 0 0 50 100 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.1 0.01 150 0.1 CHANNEL TEMPERATURE: Tch (℃) 1 10 0.1 0 -50 -25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE: Tch (℃) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6 7 ID=19A 0.2 ID=9.5A 0.1 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Sourse-Drain Voltage 100 VDS= 10V Pulsed SOURCE CURRENT : IS (A) ID= 9.5A 0.2 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) ID= 19.0A 0.3 100 100 0.3 5 0.4 Fig.8 Forward Transfer Admittance vs. Drain Current Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature VGS= 10V Pulsed 4 Ta=25℃ pulsed DRAIN CURRENT : ID (A) 0.5 3 0.5 VGS= 10V Pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 4 2 Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10 VDS= 10V ID= 1mA -50 1 GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) GATE THRESHOLD VOLTAGE: VGS(th) (V) 0.1 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] 5 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.001 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VDS= 10V Pulsed 10 VGS=4.5V 2 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) VGS=10.0V VGS=8.0V VGS= 7.0V VGS=6.5V VGS=6.0V Ta=25℃ pulsed Drain Current : ID [A] 100 18 5 0.4 Fig.3 Typical Transfer Characteristics Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.01 VGS= 0V Pulsed 10 1 0.1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.01 0.1 1 10 DRAIN CURRENT : ID (A) 3/5 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SOURCE-DRAIN VOLTAGE : VSD (V) 2011.10 - Rev.A Fig.10 Typical Capacitance vs. Drain-Source Voltage 1000 Coss Crss Ta= 25℃ f= 1MHz VGS= 0V 1 Ta= 25℃ VDD= 250V ID= 19A RG= 10Ω Pulsed 10 REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V) CAPACITANCE : C (pF) 10000 15 Ciss 100 5 0 0.01 0.1 1 10 100 Fig.12 Reverse Recovery Time vs. Source Current Fig.11 Dynamic Input Characteristics 10000 10 Data Sheet R5019ANX 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 1000 100 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 10 0 10 20 30 40 50 60 TOTAL GATE CHARGE : Qg (nC) 70 0 1 10 100 SOURCE CURRENT : IS (A) Fig.13 Switching Characteristics SWITCHING TIME : t (ns) 10000 VDD≒250V VGS=10V RG=10W Ta=25℃ Pulsed tf 1000 td(off) 100 10 tr td(on) 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A Data Sheet R5019ANX Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A