V23990-P729-F46-PM fastPACK 0 H 2nd gen Maximum

V23990-P729-F46-PM
final data sheet
fastPACK 0 H 2nd gen
V23990-P729-F46-01-14
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
P729-F46 1200V/25A
Symbol
Datasheet values
Unit
max.
DC link Capacitor
DC link Kondensator
Max.DC voltage
Max. Gleichspannung
TC=25°C
UMAX
1000
V
VCE
1200
V
Transistor H-bridge(IGBT)
Transistor H-Brücke(IGBT)
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector current
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
SC withstand time*
Kurzschlußverhalten*
max. Chip temperature
max. Chiptemperatur
Th=80°C,
Tc=80°C
tp limited by Tj max
IC
30
A
Icpuls
75
A
Tj=Tjmax
Ptot
73
W
VGE
±20
V
tSC
10
us
Tjmax
150
°C
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=Tjmax VGE=15V
VCC=360V
Diode H-bridge
Diode H-Brücke
DC forward current
Dauergleichstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. Chip temperature
max. Chiptemperatur
Th=80°C,
Tc=80°C
tp limited by Tj max
IF
18
A
IFRM
50
A
Tj=Tjmax
Ptot
35
W
Tjmax
150
°C
Tstg
-40…+125
°C
Top
-40…+125
°C
Tj=Tjmax
Th=80°C
Tc=80°C
Thermal properties
Thermische Eigenschaften
Storage temperature
Lagertemperatur
Operation temperature
Betriebstemperatur
Copyright by Vincotech
1
Revision: 1
V23990-P729-F46-PM
final data sheet
fastPACK 0 H 2nd gen
V23990-P729-F46-01-14
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
P729-F46 1200V/25A
Symbol
Datasheet values
Unit
max.
Insulation properties
Modulisolation
Insulation voltage
Isolationsspannung
Creepage distance
Kriechstrecke
Clearance
Luftstrecke
Additional notes and remarks:
Copyright by Vincotech
t=1min
Vis
4000
Vdc
min 12,7
mm
min 12,7
mm
* Allowed number of short circuits must be less than 1000 times,
and time duration between short circuits should be more than 1
second!
2
Revision: 1
V23990-P729-F46-PM
final data sheet
fastPACK 0 H 2nd gen
V23990-P729-F46-01-14
P729-F46
Characteristic values/ Charateristische Werte
Description
Symbol Conditions
T(C°)
Unit
Datasheet values
Other conditions
(Rgon-Rgoff)
VGE(V)
VGS(V)
VCE(V) IC(A) IF(A)
VDS(V)
Id(A)
Min
Typ
Max
45
56
67
nF
4
5,5
7
V
2,12
2,24
2,9
V
0,1
mA
200
nA
Capacitor
Kondensator
C value
C Wert
C
Transistor H-bridge(IGBT)
Transistor H-Brücke(IGBT)
Gate emitter threshold voltage
Gate-Schwellenspannung
Collector-emitter saturation voltage
Kollektor-Emitter Sättigungsspannung
Collector-emitter cut-off
Kollektor-Emitter Reststrom
Gate-emitter leakage current
Gate-Emitter Reststrom
Integrated Gate resistor
Integrirter Gate Widerstand
Turn-on delay time
Einschaltverzögerungszeit
Rise time
Anstiegszeit
Turn-off delay time
Abschaltverzögerungszeit
Fall time
Fallzeit
Turn-on energy loss per pulse
Einschaltverlustenergie pro Puls
Turn-off energy loss per pulse
Abschaltverlustenergie pro Puls
Input capacitance
Eingangskapazität
Output capacitance
Ausgangskapazität
Reverse transfer capacitance
Rückwirkungskapazität
Thermal resistance chip to heatsink per chip
VGE(th)
VCE(sat)
ICES
IGES
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=VGE
1m
15
25
0
600
20
0
Rgint
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coss
Cies
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 f=1MHz
ns
±15
600
25
131
±15
600
25
15
±15
600
25
233
±15
600
25
92
ns
ns
ns
mWs
±15
600
25
1,35
±15
0
600
25
25
1,76
2,02
mWs
Wärmewiderstand Chip-Kühlkörper pro Chip
nF
f=1MHz
0
25
0,19
nF
f=1MHz
0
25
0,06
nF
0,95
K/W
Thermal grease
thickness50um
Warmeleitpaste
Dicke50um = 0,61
W/mK
RthJH
K/W
Diode H-bridge
Diode H-Brücke
Diode forward voltage
VF
Durchlaßspannung
Peak reverse recovery current
IRM
Rückstromspitze
Reverse recovery time
trr
Sperreverzögerungszeit
Reverse recovered charge
Qrr
Sperrverzögerungsladung
Reverse recovered energy
Sperrverzögerungsenergie
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
Erec
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
25
1
4
±15
600
25
54,5
Rgon=16 ±15
600
25
147
ns
uC
Rgon=16 ±15
600
25
3,42
Rgon=16 ±15
600
25
1,55
mWs
1,99
K/W
WarmeleitpasteDicke50u
RthJC
V
$
Rgon=16 Thermal grease thickness
RthJH
2,65
2,31
K/W
NTC-Thermistor
NTC-Widerstand
Rated resistance
Nennwiderstand
Deviation of R100
Abweichung von R100
Power dissipation given Epcos-Typ
Verlustleistung Epcos-Typ angeben
B-value
B-Wert
Copyright by Vincotech
R25
Tj=25°C
Tol. ±5%
DR/R
Tc=100°C
R100=1503
P
Tj=25°C
B(25/100) Tj=25°C
Tol. ±3%
3
20,9
22
23,1
kOhm
2,9
%/K
210
mW
3980
K
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Output inverter
Figure 1. Typical output characteristics
Figure 2.
Output inverter IGBT
Typical output characteristics
Output inverter IGBT
Ic= f(V CE)
Ic= f(V CE)
60
IC (A)
IC (A)
60
50
50
40
40
30
30
20
20
10
10
0
0
0
1
2
3
4
VCE (V)
5
0
1
2
3
4
VCE (V)
5
parameter: tp = 250 us Tj = 25 °C
VGE parameter:
from:
7 V to
17 V
in
1 V steps
parameter: tp = 250 us Tj = 125 °C
VGE parameter:
from:
7 V to
17 V
in
1 V steps
Figure 3. Typical transfer characteristics
Figure 4.
Typical diode forward current as
a function of forward voltage
IF=f(VF)
Output inverter FRED
Output inverter IGBT
Ic= f(V GE)
25
IC (A)
IF (A)
60
50
20
25 oC
40
125 oC
15
25 oC
125 oC
30
10
20
5
10
0
0
0
3
6
9
V GE (V)
parameter: tp = 250 us VCE =
Copyright by Vincotech
0
12
10 V
1
2
3
VF (V)
4
parameter: tp = 250 us
4
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Output inverter
Figure 5. Typical switching energy losses
Figure 6.
as a function of collector current
Output inverter IGBT
E = f (RG)
E = f (Ic)
3,5
E (mWs)
3,5
E (mWs)
Typical switching energy losses
as a function of gate resistor
Output inverter IGBT
Eoff
3
Eon
2,5
2
Eon
3
2,5
2
Erec
1,5
1,5
1
1
0,5
0,5
Eoff
Erec
0
0
0
10
20
30
40
I C (A)
0
50
15
30
inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Rgon=
16 Rgoff=
16 inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Ic =
25 A
Figure 7. Typical switching times as a
Figure 8.
function of collector current
Output inverter IGBT
45
60
R G ( : ) 75
Typical switching times as a
function of gate resistor
Output inverter IGBT
t = f (R G)
t = f (Ic)
1
tdoff
t ( Ps)
t ( Ps)
1
tdon
tdoff
tdon
tf
0,1
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
10
20
30
40
IC (A)
50
0
inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Rgon=
16 Rgoff=
16 Copyright by Vincotech
15
30
45
60
RG (:)
75
inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Ic =
25 A
5
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Output inverter
Figure 9. Typical reverse recovery time as a
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
IRRM = f (Rgon)
100
t rr( Ps)
IrrM (A)
0,5
0,4
80
0,3
60
0,2
40
0,1
20
0
0
0
15
Tj =
VR =
I F=
VGE=
30
125
600
25
±15
45
60 R Gon ( : ) 75
0
15
°C
V
A
V
Tj =
VR =
I F=
VGE=
Figure 11. Typical reverse recovery charge as a
45
60
R Gon ( : ) 75
°C
V
A
V
Figure 12. Typical rate of fall of forward
function of IGBT turn on gate resistor
Output inverter FRED diode
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
Qrr = f (Rgon)
5
6000
direc / dt (A/ Ps)
Qrr ( PC)
30
125
600
25
±15
4
5000
4000
3
dIrec/dt
3000
dI0/dt
2
2000
1
1000
0
0
0
15
Tj =
VR =
I F=
VGE=
30
125
600
25
±15
45
60 R Gon ( :) 75
0
°C
V
A
V
Copyright by Vincotech
15
Tj =
VR =
I F=
VGE=
6
30
125
600
25
±15
45
60 R Gon ( :) 75
°C
V
A
V
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Output inverter
Figure 13. IGBT transient thermal impedance
Figure 14. FRED transient thermal impedance
as a function of pulse width
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
1
1
10
ZthJH (K/W)
ZthJH (K/W)
10
100
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
10
10-2
10-2
10-5
10-4
10-3
10-2
Parameter: D = tp / T
10-1
100
t p (s)
10-5
101
RthJH= 0,95 K/W
10-4
10-3
10-2
Parameter: D = tp / T
IGBT thermal model values
FRED thermal model values
R (C/W)
R (C/W)
0,02
0,10
0,30
0,36
0,11
0,03
Tau (s)
1,6E+01
1,7E+00
2,6E-01
8,0E-02
1,1E-02
8,0E-04
Copyright by Vincotech
0,03
0,17
0,65
0,60
0,32
0,23
7
10-1
100
t p (s)
101
RthJH= 1,99 K/W
Tau (s)
1,1E+01
1,1E+00
1,6E-01
3,9E-02
7,4E-03
1,1E-03
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Output inverter
Figure 15. Power dissipation as a
Figure 16. Collector current as a
function of heatsink temperature
Output inverter IGBT
function of heatsink temperature
Output inverter IGBT
Ptot = f (Th)
Ic = f (Th)
40
IC (A)
Ptot (W)
180
150
30
120
20
90
60
10
30
0
0
0
50
100
150
Th ( o C)
0
200
50
100
150
parameter: Tj= 150 ºC
parameter: Tj= 150 ºC
VGE=
15 V
Figure 17. Power dissipation as a
Figure 18. Forward current as a
o
Th ( C)
200
function of heatsink temperature
Output inverter FRED
function of heatsink temperature
Output inverter FRED
Ptot = f (Th)
IF = f (Th)
100
IF (A)
Ptot (W)
40
80
30
60
20
40
10
20
0
0
0
50
100
150
Th ( o C)
0
200
parameter: Tj= 150 ºC
Copyright by Vincotech
50
100
150
Th ( o C) 200
parameter: Tj= 150 ºC
8
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Thermistor
Figure 19. Typical NTC characteristic
as afunction of temperature
RT = f (T)
NTC-typical temperature characteristic
R/
25000
20000
15000
10000
5000
0
25
50
Copyright by Vincotech
75
100
T (°C)
125
9
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Switching definitions
General conditions:
Figure 1.
Tj=
125 °C
Rgon=
Turn-off Switching Waveforms &
definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
Output inverter IGBT
Figure 2.
16 Rgoff=
16 Turn-on Switching Waveforms &
definition of tdon, tEon
(tEon = integrating time for Eon)
Output inverter IGBT
400
140
Ic
120
350
tdoff
100
300
Uce 90%
Uge 90%
80
250
Ic
60
200
%
%
40
150
Uce
tEoff
20
100
Uge
tdon
0
Uge
50
Ic 1%
Uce
Uge10%
-20
Uce3%
Ic10%
0
tEon
-40
-0,3
-50
-0,2
-0,1
Uge(0%)=
Uge(100%)=
Uc(100%)=
Ic(100%)=
tdoff=
tEoff=
Figure 3.
0
-15
15
600
25
0,23
0,40
0,1
0,2
time (us)
0,3
0,4
0,5
0,6
2,6
V
V
V
A
us
us
2,7
2,8
Uge(0%)=
Uge(100%)=
Uc(100%)=
Ic(100%)=
tdon=
tEon=
Turn-off Switching Waveforms &
definition of tf
Output inverter IGBT
Figure 4.
2,9
3
3,1
time(us)
-15
15
600
25
0,13
0,39
3,2
3,3
3,4
3,5
V
V
V
A
us
us
Turn-on Switching Waveforms &
definition of tr
Output inverter IGBT
380
140
120
Ic
340
fitted
Uce
Ic
300
100
260
Ic 90%
80
220
% 180
Ic 60%
% 60
40
140
Ic 40%
Uce
Ic90%
100
20
Ic10%
0
20
tf
0,15
0,2
0,25
0,3
time (us)
0,35
0,4
0,45
Uc(100%)=
600 V
Ic(100%)=
25 A
tf= 0,092 us
Copyright by Vincotech
Ic10%
-20
2,85
-20
0,1
tr
60
2,9
2,95
3
3,05
time(us)
3,1
3,15
3,2
Uc(100%)= 600 V
Ic(100%)=
25 A
tr= 0,015 us
10
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Switching definitions
Figure 5.
Turn-off Switching Waveforms &
definition of tEoff
Output inverter IGBT
Figure 6.
Turn-on Switching Waveforms &
definition of tEon
Output inverter IGBT
300
120
Eoff
100
260
Poff
Pon
220
80
180
60
140
%
Eon
%
100
40
20
60
Uge90%
Ic 1%
0
Uge10%
20
Uce3%
tEon
tEoff
-20
-0,4
-20
-0,2
0
0,2
time (us)
0,4
0,6
2,7
0,8
2,8
2,9
Poff(100%)= 14,96 kW
Eoff(100%)= 1,76 mJ
tEoff= 0,40 us
Pon(100%)=
Eon(100%)=
tEon=
Figure 7. Gate voltage vs Gate charge
Figure 8.
Output inverter IGBT
20
150
15
100
3,1
time(us)
3,2
3,3
3,4
15 kW
1,35 mJ
0,39 us
Turn-off Switching Waveforms &
definition of trr
Output inverter FRED
Id
fitted
trr
50
10
0
Ud
5
Uge (V)
3
-50
IRRM10%
%
-100
0
-5
-150
-10
-200
-15
-250
IRRM90%
IRRM100%
-300
-20
-50
0
50
100
Ugeoff=
-15
Ugeon=
15
Uc(100%)=
600
Ic(100%)=
25
Qg= 309,3
Copyright by Vincotech
150
Qg (nC)
200
250
300
2,8
350
V
V
V
A
nC
2,9
Ud(100%)=
Id(100%)=
IRRM(100%)=
trr=
11
3
600
25
55
0,15
3,1
time(us)
3,2
3,3
3,4
V
A
A
us
Revision: 1
V23990-P729-F46-PM
fastPACK0 H 2nd gen
V23990-P729-F46
Switching definitions
Figure 9.
Turn-on Switching Waveforms &
definition of tQrr
(tQrr= integrating time for Qrr)
Output inverter FRED
Figure 10.
Turn-on Switching Waveforms &
definition of tErec
(tErec= integrating time for Erec)
Output inverter FRED
150
150
Qrr
100
Prec
125
Id
Erec
100
50
tQint
0
75
%-50
% 50
-100
25
-150
0
-200
-25
tErec
-50
-250
2,6
2,8
3
3,2
3,4
time(us)
3,6
3,8
2,6
4
Id(100%)=
25 A
Qrr(100%)= 3,419 uC
tQint= 0,50 us
Copyright by Vincotech
2,8
Prec(100%)=
Erec(100%)=
tErec=
12
3
3,2
3,4
time(us)
3,6
3,8
4
15 kW
1,55 mJ
0,50 us
Revision: 1