Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET® FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 12.5 0.01375 at VGS = 4.5 V 10.0 • Extremely Low Qgd WFET Technology for Switching Losses • TrenchFET® Power MOSFET • 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 D G Top View S Ordering Information: Si4392DY-T1 Si4392DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noteda Parameter Symbol Limits Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 12.5 ID 10 IDM 50 IS 2.7 IAS 30 EAS 45 A mJ 3.0 PD W 1.9 TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGSa Parameter Symbol Typical Maximum Maximum Junction-to-Ambient RthJA 33 42 Maximum Junction-to-Foot (Drain) RthJF 16 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board, t ≤ 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72151 S-61013-Rev. E, 12-Jun-06 www.vishay.com 1 Si4392DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min 1.0 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea Diode Forward Voltage a 3.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V µA 30 A VGS = 10 V, ID = 12.5 A 0.008 0.00975 VGS = 4.5 V, ID = 10.0 A 0.011 0.01375 gfs VDS = 15 V, ID = 12.5 A 40 VSD IS = 2.7 A, VGS = 0 V 0.73 1.1 10 15 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 0.5 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.5 2.6 1.6 2.7 15 25 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 5 10 45 70 8 15 IF = 2.7 A, di/dt = 100 A/µs 30 60 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 3V 20 10 30 20 TC = 125 °C 10 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72151 S-61013-Rev. E, 12-Jun-06 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 1800 Ciss 1500 0.024 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 0.030 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 1200 900 Coss 600 Crss 300 0 0.000 0 10 20 30 40 0 50 6 12 30 Capacitance 1.8 6 VDS = 15 V ID = 12.5 A 5 VGS = 10 V ID = 12.5 A 1.6 rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 4 3 2 1.4 1.2 1.0 0.8 1 0.6 - 50 0 0 3 6 9 12 15 0 25 50 75 100 125 Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 150 0.040 r DS(on) - On-Resistance (Ω) TJ = 150 °C 10 1 TJ = 25 °C 0.1 0.0 - 25 TJ - Junction Temperature (°C) 50 I S - Source Current (A) 18 0.032 ID = 12.5 A 0.024 0.016 0.008 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72151 S-61013-Rev. E, 12-Jun-06 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.6 30 0.4 0.2 18 Power (W) V GS(th) Variance (V) 24 ID = 250 µA 0.0 - 0.2 12 - 0.4 6 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 10- 2 150 10- 1 1 TJ - Temperature (°C) 10 100 600 Time (sec) Single Pulse Power Threshold Voltage 100 Limited by rDS(on) I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TC = 25 °C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72151 S-61013-Rev. E, 12-Jun-06 Si4392DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72151 Document Number: 72151 S-61013-Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1