2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (−160V, −1.5A) 2SA2005 !Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = −160V) 3) High fT. (Typ. 150MHz) 4) Wide SOA (safe operating area). 5) Complements the 2SC5511. !External dimensions (Units : mm) 4.5 10.0 1.2 1.3 0.8 2.54 !Absolute maximum ratings (Ta = 25°C) 2.54 (1) (2) (3) (1) (2) (3) Parameter Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO −160 −160 V V Emitter-base voltage Collector current VEBO IC −5 −1.5 V A PC Collector power dissipation ROHM : TO-220FN 2 W 20 W (Tc = 25°C) Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C !Packaging specifications and hFE Type 2SA2005 Package hFE Code Basic ordering unit TO-220FN DE 500 !Electrical characteristics (Ta = 25°C) Parameter Collector-emitter breakdown voltage Symbol Min. BVCEO −160 Typ. − Max. − Unit V IC = −1mA Collector-base breakdown voltage Emitter-base breakdown voltage BVCBO BVEBO −160 −5 − − − − V V IC = −50µA IE = −50µA Collector cutoff current ICBO − − −1 µA VCB = −160V Emitter cutoff current IEBO − − −1 µA VEB = −4V VCE(sat) − − −1 V IC/IB = −1A/−0.1A VCE = −5V , IC = −0.1A Collector-emitter saturation voltage hFE 60 − 200 − Transition frequency fT − 150 − MHz Output capacitance Cob − 35 − pF DC current transfer ratio 2.8 8.0 5.0 14.0 15.0 12.0 φ 3.2 Conditions VCE = −10V , IE = −0.2A , f = 100MHz VCB = −10V , IE = 0A , f = 1MHz 0.75 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)