2SB1674 Transistors Power Transistor (−120V, −6A) 2SB1674 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615. -120 -120 V V VEBO -6 -6 -10 V A(DC) Collector power dissipation PC Junction temperature Storage temperature * Single pulse, P Tj Tstg 8.0 ROHM : TO-220FN A(Pulse) * 2 W 30 150 W(Tc=25˚C) ˚C ˚C -55~+150 0.75 2.54 (1) (2) (3) VCBO VCES IC 1.3 (1) (2) (3) Emitter-base voltage W=10ms !Packaging specifications and hFE Type 2SB1674 Package hFE TO-220FN 2k~20k Code Basic ordering unit (pieces) 500 !Circuit diagram C B R1 R2 E R1 5.0kΩ R2 300Ω B : Base C : Collector E : Emitter !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO -100 V V µA -3 -1.5 20k mA V - VEB=-5V VCE(sat) - IC=-50µA IC=-5mA Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage -120 -120 2k - 12 70 - MHz pF DC current transfer ratio ICBO IEBO hFE Transition frequency fT Output capacitance Cob *1 Measured using pulse current. *2 Transition frequency of the device. 2.8 0.8 Unit Collector-base voltage Collector-emitter voltage Collector current 1.2 2.54 Limits Symbol 5.0 14.0 15.0 12.0 φ 3.2 !Absolute maximum ratings (Ta=25°C) Parameter 4.5 10.0 Conditions VCB=-120V IC/IB=-3A/-6mA VCE/IC=-3V/-2A VCE=-5V , IE=0.5A , f=10MHz VCB=-10V , IE=0A , f=1MHz *1 *1 *2 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)