2SD2394 Transistors Power Transistor (60V, 3A) 2SD2394 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 4.5 10.0 2.8 8.0 5.0 14.0 15.0 12.0 φ 3.2 1.2 1.3 0.8 2.54 2.54 0.75 (1) (2) (3) (1) (2) (3) ROHM : TO-220FN !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit VCBO VCEO 80 60 7 3 V V V A(DC) Collector-base voltage Collector-emitter voltage Emitter-base voltage VEBO IC Collector current Collector power dissipation ICP 6 PC 2 25 Junction temperature Tj Storage temperature Tstg ∗ A(Pulse) W W(Tc=25°C) °C 150 − 55 ∼ +150 °C ∗ Single pulse, Pw=100ms !Packaging specifications and hFE Type Package hFE TO-220FN EF 2SD2394 Code Basic ordering unit (pieces) − 500 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BVCBO BVCEO BVEBO 80 60 7 − − − V V V ICBO − − − − − 10 IEBO − Collector-emitter saturation voltage VCE(sat) VCE(sat) − − − 10 1 µA µA V − − 0.8 V Base-emitter saturation voltage VBE(sat) − 1.5 320 − V IC/IB = 2A/0.2A 100 − − − 8 − MHz VCE/IC = 5V/0.5A VCE = 5V , IE = −0.5A , f = 5MHz − 35 − pF Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. hFE fT Cob Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 60V VEB = 7V IC/IB = 2A/0.2A VCB = 10V , IE = 0A , f = 1MHz ∗ ∗ 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)