Corel Ventura - 2N4351.CHP

N-Channel Enhancement Mode
MOSFET General Purpose
Amplifier/Switch
LLC
2N4351
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
• Low ON Resistance
• Low Capacitance
Gain
• High
• High Gate Breakdown Voltage
• Low Threshold Voltage
Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC
PIN CONFIGURATION
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-72
ORDERING INFORMATION
C
D
1003
Part
Package
Temperature Range
2N4351
X2N4351
Hermetic TO-72
Sorted Chips in Carriers
-55oC to +150oC
-55oC to +150oC
S
G
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
BVDSS
Drain-Source Breakdown Voltage
IGSS
Gate Leakage Current
10
pA
VGS = ±30V, VDS = 0
IDSS
Zero-Gate-Voltage Drain Current
10
nA
VDS = 10V, VGS = 0
VGS(th)
Gate-Source Threshold Voltage
1
5
V
3
ID(on)
"ON" Drain Current
VDS(on)
Drain-Source "ON" Voltage
rDS(on)
Drain-Source Resistance
| yfs |
Forward Transfer Admittance
25
V
TEST CONDITIONS
ID = 10µA, VGS = 0
VDS = 10V, ID = 10µA
mA
VGS = 10V, VDS = 10V
1
V
ID = 2mA, VGS = 10V
300
ohms
µS
1000
Crss
Reverse Transfer Capacitance (Note 2)
1.3
Ciss
Input Capacitance (Note 2)
5.0
Cd(sub)
Drain-Substrate Capacitance (Note 2)
5.0
td(on)
Turn-On Delay (Note 2)
45
tr
Rise Time (Note 2)
65
td(off)
Turn-Off Delay (Note 2)
60
tf
Fall Time (Note 2)
100
VGS = 10V, ID = 0, f = 1kHz
VDS = 10V, ID = 2mA, f = 1kHz
VDS = 0, VGS = 0, f = 1MHz
pF
VDS = 10V, VGS = 0, f = 1MHz
VD(SUB) = 10V, f = 1MHz
ns
NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms.
2. For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539 510-656-2900 PHONE, 510-651-1076 FAX
DS002 REV A