ROHM RRE04EA4D

Data Sheet
Rectifier Diode
RRE04EA4D
Dimensions (Unit : mm)
●Applications
General Rectification
Land size figure (Unit : mm)
2.9±0.1
＋0.1
Each read has same dimensions
0.4　－0.05 各リードとも同寸法
(4)
(1)
(2)
0.95
(3)
0～0.1
0.33±0.03
0.7±0.1
0.95
TSMD5
0.85±0.1
1.9±0.2
●Construction
Silicon epitaxial planer
0.3～0.6
1.6
＋0.2
－0.1
●Features
1)Small mold type. (TSMD5)
2)High Reliability.
2.8±0.2
(5)
0.16±0.1
0.06
Structure
1.0Max
ROHM : TSMD5
dot (year week factory)
Taping dimensions (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current (*1)
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
φ1.1±0.1
4.0±0.1
3.2±0.08
Conditions
D≤0.5
Direct voltage
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
3.2±0.08
8.0±0.2
5.5±0.2
0～0.5
3.2±0.08
3.5±0.05
1.75±0.1
4.0±0.1
1.1±0.08
Limits
400
400
Unit
V
V
0.4
A
2
A
150
- 55 to +150
°C
°C
Typ.
0.95
0.01
Max.
1.1
1
(*1) 1/2 x Io at per diode
Electrical characteristics (Tj=25°C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Conditions
IF=0.2A
VR=400V
Min.
－
－
Unit
V
μA
* per diode
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1/4
2011.09 - Rev.A
Data Sheet
RRE04EA4D
1000
1
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=150°C
Tj=150°C
0.1
Tj=125°C
Tj=25°C
0.01
Tj=75°C
100
Tj=125°C
Tj=75°C
10
1
Tj=25°C
per diode
per diode
0.1
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
100
200
400
960
10
f=1MHz
Tj=25°C
IF=0.2A
n=20pcs
per diode
FORWARD VOLTAGE:VF(mV)
955
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
300
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
1
950
945
940
935
AVE:941mV
930
925
per diode
0.1
920
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
5
Tj=25°C
VR=400V
n=20pcs
per diode
10
1
AVE:4.6nA
4.5
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
100
Tj=25°C
f=1MHz
VR=0V
n=10pcs
per diode
4
3.5
3
2.5
AVE:3.39pF
2
1.5
1
0.5
0.1
0
Ct DISPERSION MAP
IR DISPERSION MAP
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2/4
2011.09 - Rev.A
Data Sheet
RRE04EA4D
10
100
per diode
9
PEAK SURGE
FORWARD CURRENT:IFSM(A)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8
7
6
AVE:7.40A
5
4
3
1cyc
IFSM
2
1
8.3ms
10
1
8.3ms
per diode
0
0.1
1
10
IFSM DISPERSION MAP
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10.0
per diode
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
9.0
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
1cyc
t
10
1
8.0
7.0
6.0
5.0
AVE:6.84kV
4.0
3.0
AVE:4.58kV
2.0
1.0
per diode
0.0
0.1
1
10
C=200pF
R=0Ω
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
0.8
1000
D=0.8
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
D.C.
0.7
Rth(j-a)
Rth(j-c)
100
10
0.6
D=0.5
0.5
half sin wave
0.4
0.3
0.2
0.1
On glass-epoxy substrade
1
0.001
0
0.01
0.1
1
10
100
1000
0
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0.1
0.2
0.3
0.4
0.5
0.6
0.7
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.09 - Rev.A
0.8
0.8
Io
0A
0V
D.C.
D=t/T
VR=200V
Tj=150°C
On glass-epoxy substrate
T
D=0.8
0.5
D=0.5
Io
0V
VR
t
0.4
half sin wave
0.3
0.2
0.6
D=t/T
VR=200V
Tj=150°C
T
D.C.
VR
t
0.6
0A
0.7
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.7
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
RRE04EA4D
D=0.8
0.5
D=0.5
0.4
half sin wave
0.3
0.2
0.1
0.1
0
0
0
30
60
90
120
0
150
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
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30
4/4
2011.09 - Rev.A
Notice
Notes
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R1120A