SiC Schottky 3 Phase Diode Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 650V isolation • 6 off high current 10A diodes • High temperature 210°C • Higher efficiency • Reduction of heat sink requirements m i l e r P • BeO free and RoHS compliant • HMP solder tinned leads available • Electrically isolated flange • Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superior high temperature performance • No reverse recovery time • Screening options available ºº ºº ºº Applications Figure 1: TO-258 5 PIN Case NC • Harsh environment rectification • Harsh environment regulators Commercial high temperature In accordance with MIL-PRF-19500 Other options available on request • Other packaging options available Pin 1 - Absolute Maximum Ratings (Per Diode)* Symbols Pin 2 Pin 3 Pin 4 Pin 5 ~ ~ ~ + Figure 2: Circuit Diagram Values Units DC Reverse Voltage 650 Volts VRRM Repetitive Peak Reverse Voltage 650 Volts IF(MAX) Average Forward Current 10 Amps IFSM Surge Peak Forward Current (8.3ms, Half Sine Wave ) 60 Amps PD Total Power Dissipation 28 Watts TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o Values Units VR Parameters C C Thermal Properties Symbols RθJC April 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 1.1 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Schottky 3 Phase Diode Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN Electrical Characteristics (Per Diode) Symbols Parameters VF Forward Voltage ## IR Reverse Current ## Qc Total Capacitive Charge ## C Typ Max IF = 10A, TJ = 25oC 1.5 1.7 IF = 10A, TJ = 175oC 3.2 4.1 VR = 650V, TJ = 25oC 25 250 VR = 650V, TJ = 175oC 140 1000 VR = 400V, TJ=25oC, IF=10A, di/dt=250 A/μs 16 VR = 1V, TJ=25oC, f=1MHz 290 VR = 300V, TJ=25oC, f=1MHz 31 VR = 600V, TJ=25oC, f=1MHz 28 m i l e r P Total Capacitance ## ## Calculated per single diode y r a in Test Conditions Units Volts μAmps nC pF CE = TO-258 5 PIN ####### = Batch code yyww = Date code M I C R O S S M Y X D 3 0 6 5 0 - 1 0 C E N # # # # # # # y y w w yy = year ww = week (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions April 2014 Rev 1.0 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Schottky 3 Phase Diode Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN Revision History Revision # History 1.0 Initial release April 2014 Rev 1.0 Release Date April 2014 Status Preliminary 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com