Silicon Carbide Schottky Diode 1200 Volt 3 Amp Hermetic MYXDS1200-03ABS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 1200V isolation in a small package outline • Higher efficiency • Reduction of heat sink requirements • High current 3A • High temperature 210°C m i l e r P • BeO free and RoHS compliant • HMP solder tinned leads available • Electrically isolated flange Applications • Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superior high temperature performance • No reverse recovery time • Screening options available • Harsh environment motor drive Figure 1: TO-257 Domed Lid • Harsh environment regulators Case ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other packaging options available Pin1 Pin2 Pin3 Figure 2: Circuit Diagram Absolute Maximum Ratings Symbols Values Units DC Reverse Voltage 1200 Volts VRRM Repetitive Peak Reverse Voltage 1200 Volts IF(AVG) Average Forward Current (no AC component) 3 Amps IFRM Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave) 26 Amps IFSM Surge Peak Forward Current (Tp=10ms, Half Sine Wave ) 46 Amps PD Total Power Dissipation 9.4 Watts TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o Values Units VR Parameters C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 19.8 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Schottky Diode 1200 Volt 3 Amp Hermetic MYXDS1200-03ABS Electrical Characteristics Symbols Parameters VF Forward Voltage Typ Max IF = 3A, TJ = 25oC 1.2 1.7 IF = 3A, TJ = 210oC 1.7 2.2 VR = 1200V, TJ = 25oC 20 200 VR = 1200V, TJ = 210oC 155 1000 VR = 1200V, TJ = 25oC, IF = 3 A, di/dt = 200 A/μs 34.5 VR = 0V, TJ = 25oC, f= 1MHz 390 VR = 400V, TJ = 25oC, f= 1MHz 27 VR = 800V, TJ = 25oC, f= 1MHz 20 m i l e r P IR Reverse Current Qc Total Capacitive Charge C y r a in Test Conditions Total Capacitance Units Volts μAmps nC pF yywwa = Date code and batch yy = year ww = week a = batch (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions March 2014 Rev 1.0 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Schottky Diode 1200 Volt 3 Amp Hermetic MYXDS1200-03ABS y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Schottky Diode 1200 Volt 3 Amp Hermetic MYXDS1200-03ABS Revision History Revision # History 1.0 Initial release March 2014 Rev 1.0 Release Date March 2014 Status Preliminary 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com