1200V 10A Hermetic Schottky Diode

Silicon Carbide Schottky Diode
1200 Volt 3 Amp Hermetic
MYXDS1200-03ABS
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Product Overview
Features
Benefits
• Essentially no switching losses
• High voltage 1200V isolation in a small package
outline
• Higher efficiency
• Reduction of heat sink requirements
• High current 3A
• High temperature 210°C
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• BeO free and RoHS compliant
• HMP solder tinned leads available
• Electrically isolated flange
Applications
• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
• Screening options available
• Harsh environment motor drive
Figure 1: TO-257 Domed Lid
• Harsh environment regulators
Case
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Pin1 Pin2 Pin3
Figure 2: Circuit Diagram
Absolute Maximum Ratings
Symbols
Values
Units
DC Reverse Voltage
1200
Volts
VRRM
Repetitive Peak Reverse Voltage
1200
Volts
IF(AVG)
Average Forward Current (no AC component)
3
Amps
IFRM
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
26
Amps
IFSM
Surge Peak Forward Current (Tp=10ms, Half Sine Wave )
46
Amps
PD
Total Power Dissipation
9.4
Watts
TJ
Junction Temperature Range
-55 to +210
o
Tstg
Storage Temperature Range
-55 to +210
o
Values
Units
VR
Parameters
C
C
Thermal Properties
Symbols
RθJC
March 2014 Rev 1.0
Parameters
Thermal Resistance, Junction To Case
19.8
o
C / Watt
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com
Silicon Carbide Schottky Diode
1200 Volt 3 Amp Hermetic
MYXDS1200-03ABS
Electrical Characteristics
Symbols
Parameters
VF
Forward Voltage
Typ
Max
IF = 3A, TJ = 25oC
1.2
1.7
IF = 3A, TJ = 210oC
1.7
2.2
VR = 1200V, TJ = 25oC
20
200
VR = 1200V, TJ = 210oC
155
1000
VR = 1200V, TJ = 25oC, IF = 3 A, di/dt = 200 A/μs
34.5
VR = 0V, TJ = 25oC, f= 1MHz
390
VR = 400V, TJ = 25oC, f= 1MHz
27
VR = 800V, TJ = 25oC, f= 1MHz
20
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IR
Reverse Current
Qc
Total Capacitive Charge
C
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Test Conditions
Total Capacitance
Units
Volts
μAmps
nC
pF
yywwa = Date code and batch
yy = year
ww = week
a = batch
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 
  
   
(Font and text colour is not representative of actual parts produced)
Figure 3: Package Dimensions
March 2014 Rev 1.0
2
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com
Silicon Carbide Schottky Diode
1200 Volt 3 Amp Hermetic
MYXDS1200-03ABS
y
r
a
in
* Absolute Maximum Ratings Disclaimer
Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress
ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions
for any duration may affect device reliability and operational life.
Document Title
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Silicon Carbide Schottky Diode 1200 Volt 3 Amp Hermetic MYXDS1200-03ABS
Revision History
Revision #
History
1.0
Initial release
March 2014 Rev 1.0
Release Date
March 2014
Status
Preliminary
3
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com