Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Product Overview Features y r a in Benefits • High voltage 1200V • Low on resistance RDS(On) • High current 34A • Voltage controlled • High temperature 175°C • Low gate charge m i l e r P • Low intrinsic capacitance • BeO free and RoHS compliant • HMP solder tinned leads available • Silicon Carbide (SiC) JFET exhibits low on resistance RDS(On) and superior high temperature performance • Extremely fast switching • Screening options available ºº ºº ºº Applications Commercial high temperature In accordance with MIL-PRF-19500 Other options available on request Figure 1: TO-258 • Harsh environment motor drive Flange Isolated • Harsh environment inverter • Switch power supplies • Power factor correction modules • Induction heating Pin 1 • Surface mount • Other packaging options available Pin 2 Pin 3 Figure 2: Circuit Diagram Absolute Maximum Ratings* Symbols Parameters Values Units VR DC Reverse Voltage 1200 Volts VGS Gate Source Voltage -30 to + 3 Volts ID Continuous Drain Current 34 Amps IDM Pulsed Drain Current (Tp=10ms, Half Sine Wave) 86 Amps IFSM Surge Peak Forward Current (Tp=10ms, Half Sine Wave ) 76 Amps PD Total Power Dissipation 115 Watts TJ & Tstg TL Junction Temperature Range & Storage Temperature Range Soldering Temperature (Time =5 Seconds) -55 to +175 o 250 o Values Units C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 1.3 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Electrical Characteristics Symbols y r a in Parameters Test Conditions BVDS Drain Source Breakdown VGS=-20V, ID=1000µA, TJ =25oC BVGS Gate Source Breakdown VGS=VDS, ID=1mA, TJ =25oC Min Typ 1200 1700 RDS(On) VG(th) Δ Δ ΔVG(th) / ΔTJ RG Total Gate Leakage Current Drain Source On State Resistance 250 VDS=1200V, VGS=-20V, TJ =125oC TBD VDS=1200V, VGS=-20V, TJ =175oC TBD VGS=-20V, TJ =25oC IG V 20 m i l e r P Total Drain Leakage Current Units V -40 VDS=1200V, VGS=-20V, TJ =25oC ID Max 1 µA 100 VGS=-20V, TJ =125oC 100 VGS=-20V, TJ =175oC 100 VGS=2V, ID=17A, TJ =25oC 25 60 VGS=0V, ID=17A, TJ =25oC 40 70 µA mΩ VGS=2V, ID=17A, TJ =175oC TBD VGS=0V, ID=17A, TJ =175oC TBD Gate Threshold Voltage VGS=1V, ID=1mA, TJ =25oC Temp Cofficient of Gate Threshold Voltage VGS=-20V, ID=250µA -1.8 mV/oC Gate Resistance VGS= 0V, f= 5MHz 1.5 Ω 50 mA -7 -5.5 -4 V VGS=2.7V, TJ =25oC IG(FW) Gate Forward Current VGS=2.4V, TJ =125oC VGS=2.3V, TJ =175oC Charge Characteristics Symbols Parameters Test Conditions Min Typ CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance 120 QG Total Gate Charge 106 QGD Gate-Drain Charge QGS Gate-Source Charge March 2014 Rev 1.0 Max Units 900 VDS=100V, VGS=-20V, f=1MHz VDS= 0V to 960V, VGS=-15V 120 82 pF nC 9 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB y r a in BA = TO-254 ####### = Batch code yyww = Date code yy = year ww = week (Font and text colour is not representative of actual parts produced) m i l e r P Figure 3: Package Dimensions March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB * Absolute Maximum Ratings Disclaimer y r a in Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Disclaimer MICROSS COMPONENTS DO NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DO WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY MICROSS COMPONENTS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF MICROSS COMPONENTS. As used herein: m i l e r P 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Document Title Silicon Carbide JFET normally on 1200 Volt 17 Amp Hermetic MYXJ11200-34CAB Revision History Revision # History Release Date 1.0 Initial release March 2014 March 2014 Rev 1.0 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com