MIMMK150T160UX 1600V 150A thyristor Module RoHS Compliant Features · Isolated Module Package · Isolation voltage 3000 V · Three Phase Bridge and a Thyristor Applications · Current Stabilized Power Supply · Switching Power Supply · Inverter For AC or DC Motor Control ■ Diode ABSOLUTE MAXIMUM RATINGS Symbol TC=25°C unless otherwise specified Parameter Test Conditions Max. Unit 1600 V VRRM Repetitive Reverse Voltage ID(AV) Average Forward Current TC=90°C, moudle 150 A Non-Repetitive Surge TJ=45°C, t=10ms, 50Hz, Sine 1700 A Forward Current TJ=45°C,t=8.3ms, 60Hz, Sine 1900 A TJ=45°C, t=10ms, 50Hz, Sine 14450 A2s TJ=45°C,t=8.3ms, 60Hz, Sine 18050 A2s IFSM I2t I2t (For Fusing) TJ Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V 332 g AC, 50Hz, t=1min Weight ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Parameter IRM Reverse Leakage Current VF Forward Voltage RθJC RθCS Test Conditions TC=25°C unless otherwise specified Min. Typ. Max. Unit VR=1600V -- -- 500 µA VR=1600V, TJ=125°C -- -- 5 mA IF=150A -- 1.4 1.7 V -- 1.3 -- V IF=150A, TJ=125°C Thermal Resistance per diode -- -- 0.72 °C /W Junction-to-Case per module -- -- 0.12 °C /W Thermal Resistance per diode -- -- 0.36 °C /W Case -to-Sink per module -- -- 0.06 °C /W MIMMK150T160UX ■ Thyristor ABSOLUTE MAXIMUM RATINGS Symbol Test Condition TC=25°C unless otherwise specified VRRM Value Unit 1600 V A IT(AV) TC=90 , 180° conduction, half sine wave; 150 ITSM TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 1700 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 1900 TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 14450 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 18050 A2s dV/dt TJ =125 , exponential to 67% rated VDRM 1000 V/us dI/dt TJ =125 , ITM=400A rated VDRM 200 A/us VISOL 50Hz, all terminals shorted, t=1s, IISOL≤1mA ; 3000 V~ TJ Max. junction operating temperature range -40～125 TSTG Max. storage temperature range I2t -40～125 ℃ Mounting torque(M5) 2 to 4 N·m Terminal connection torque(M6) 3 to 5 N·m Terminal connection torque(M4) 1 to 2 N·m ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Test Condition IDRM/IRRM VTM TJ=125 , VD=VR=1600V; ITM=502A, td=10 ms, half sine; VA=6V, RA=1Ω, Tj=-40°C; VGT A TC=25°C unless otherwise specified Min. Typ. Max. Unit 50 mA V 1.54 4 V VA=6V, RA=1Ω; 2.5 VA=6V, RA=1Ω, Tj=125°C; 1.7 VA=6V, RA=1Ω, Tj=-40°C; 270 VA=6V, RA=1Ω; 150 VA=6V, RA=1Ω, Tj=125°C; 80 PGM tp≤5ms, Tj=125°C; 12 W PGM(AV) f=50Hz, Tj=125°C; 3 W Rthjc Thermal Resistance , Junction-to-Case 0.18 K/W RTHCS Thermal Resistance, Case -to-Sink 0.08 K/W IGT mA MIMMK150T160UX Characteristic curves 1 400 -1 10 TJ =125°C 300 ZthJC (K/W) Forward Current IF (A) 500 200 TJ =25°C 0 0.5 1 2 1.5 10-2 10-3 100 0 Duty 0.5 0.2 0.1 0.05 Single Pulse 2.5 10-4 -4 10 3 Forward Voltage Drop VF（V） 180 120 90 60 30 150 Conduction angle 50 120 90 60 150 0.06K/W 0.08K/W 120 0.1K/W 90 0.16K/W 0.2K/W 60 30 Per module TJ=125℃ 30 0 180 0 25 Output Current (A) Transient Thermal Impedance ZthJC Instantaneous On-state Current (A) 1 TJ=25℃ TJ=125℃ 100 10 Per junction 0 1 2 3 75 100 125 150 Figure 4. SCR Output Current vs Case Temperature 10000 0 50 Case Temperature (°C) Figure 3. SCR Output Current vs Power Dissipation 1000 1 RTHSA=0.02K/W-Delta R 0.04K/W 150 Output Current (A) Power Dissipation (W) 180 200 10-1 Figure 2. Diode Thermal Impedance ZthJC 250 0 0 10-2 Rectangular Pulse Duration (seconds) Figure1. Diode Forward Voltage Drop vs Forward Current 100 10-3 4 5 Steady State Value (DC Operation) 0.1 0.01 0.001 0.001 0.01 0.1 1 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Figure 5. SCR On State Voltage Drop Figure 6. SCR Thermal Impedance ZthJC 10 MIMMK150T160UX Instantaneous Gate Voltage (V) 100 Rectangular gate pulse (1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5s, tp≥6 s b)Recommended load line 10 for ≤30% rated di/dt:15V, (a) 40Ω (b) TJ=-40℃ TJ=25℃ TJ=125℃ 1 (4) VGD 0.1 0.001 (2) (1) Frequency Limited by PG(AV) IGD 0.01 (3) 0.1 1 Instantaneous Gate Current (A) Figure 7. Gate Characteristics Package Outline (Dimensions in mm) 10 100 1000