MIMMK60A160B

MIMMK60A160B
1600V 60A thyristor Module
RoHS Compliant
Features
· Isolation voltage 3500 V~
· Industrial Standard Package
· High Surge Capability
· Glass Passivated Chips
· Simple Mounting
· Electrically Isolated by DBC Ceramic
Applications
· DC Motor Control and Drives
· Battery Charges
· Welders
· Power Converters
· Lighting Control
· Heat and Temperature Control
Advantages
· Space and weight savings
· Improved temperature and power cycling
ABSOLUTE MAXIMUM RATINGS
Symbol
Test Condition
VRRM /VDRM
TC=25°C unless otherwise specified
Value
Unit
1600
V
IT(AV)
TC=85 , 180° conduction, half sine wave;
60
A
IT(RMS)
as AC switch;
135
A
TJ=45 , t=10ms (50Hz), sine, VR=0;
1310
TJ=45 , t=8.3 ms (60Hz), sine, VR=0;
1370
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
1100
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
1150
TJ=45 , t=10ms (50Hz), sine, VR=0;
8.56
TJ=45 , t=8.3 ms (60Hz), sine, VR=0;
7.82
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
6.05
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
5.53
IDRM/IRRM
TJ=130 , VD=VR=1600V, gate open circuit;
15
mA
dV/dt
TJ =130 , exponential to 67% rated VDRM
500
V/us
VISOL
50Hz, all terminals shorted, t=1s, IISOL≤1mA ;
3500
V~
TJ
Max. junction operating temperature range
-40～125
TSTG
Max. storage temperature range
-40～125
ITSM
I2 t
A
K A2s
MIMMK60A160B
ELECTRICAL CHARACTERISTICS
Symbol Test Condition
VTO
rt
IH
IL
TC=25°C unless otherwise specified
Min. Typ. Max.
Unit
16.7% x p x IAV < I < p x IAV,TJ =130°C;
0.85
V
I > p x IAV , TJ =130°C;
0.88
V
16.7% x p x IAV < I < p x IAV,TJ =130°C;
3.53
mΩ
I > p x IAV , TJ =130°C;
3.41
mΩ
VAK= 6V, resistive load;
200
mA
Anode supply =6V, resistive load=1Ω,
400
mA
1.54
V
gate pulse =10V, 100us;
VTM
ITM=188A, td=10 ms, half sine
PGM
tp≤5ms, TJ=125°C;
10
W
PGM(AV)
f=50Hz, TJ =125°C;
2.5
W
2.5
A
10
V
IGM
-VGT
tp≤5ms, TJ =125°C;
VA=6V, RA=1Ω, TJ =-40°C;
VGT
IGT
VGD
IGD
di/dt
4
VA=6V, RA=1Ω;
2.5
VA=6V, RA=1Ω, TJ=125°C;
1.7
VA=6V, RA=1Ω, TJ=-40°C;
270
VA=6V, RA=1Ω;
150
VA=6V, RA=1Ω, TJ=125°C;
80
VAK=VDRM, TJ=125
TJ= 25 , VD=0.67VDRM, ITM =345A,
V
mA
0.25
V
6
mA
150
A/us
Ig = 500mA, tr< 0.5 µs, tp > 6 µs
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Test Condition
TC=25°C unless otherwise specified
value
Unit
Rthjc
DC operation,per junction;
0.45
K/W
RTHCS
Mounting surface smooth,flat and greased,per junction
0.10
K/W
Md
Weight
Mounting torque(M5)
Terminal connection torque(M5)
Typical value
3 to 5
N·m
105
g
MIMMK60A160B
Characteristic curves
130
130
RTHJC(DC)=0.45K/W
Maximun allowable case tem (℃)
Maximun allowable case tem (℃)
130
120
110
100
90
80
70
0
10
20
40
30
50
60
RTHJC(DC)=0.45 K/W
120
120
110
110
100
100
90
90
80
80
70
70
70
0
Average forward current(A)
80
70
60
50
40
30
Per junction
TJ=130
0
0
10
20
30
40
50
60
Maximun average on-state power loss (W)
Maximun average on-state power loss (W)
90
10
120
100
80
60
40
Per junction
TJ=130℃
20
0
0
Average on-state current(A)
1100
1000
900
800
700
Per junction
500
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Figure 5. Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
1200
80
40
20
60
Average on-state current(A)
100
Figure 4. on-state power loss characteristics
Figure 3. on-state power loss characteristics
600
100
Figure 2. current rating characteristics
Figure 1. current rating characteristics
20
80
40
20
60
Average on-state current (A)
1400
1200
1000
800
600
Per junction
400
0.01
0.1
Pulse Train Duration (s)
1
Figure 6. Maximum Non-Repetitive Surge Current
MIMMK60A160B
200
Maximum Total On-state Power Loss (W)
Maximum Total On-state Power Loss (W)
200
180
160
140
120
100
80
60
40
Per module
TJ=125℃
20
0
0
40
20
80
60
100 120
140
Total RMS Output Current (A)
Figure 7. On-State Power Loss Characteristics-1
Transient Thermal Impedance ZthJC(K/W)
100
10
Per junction
1
0.5
1.5
1
2
2.5
3
3.5
4
4.5
160
140
120
100
80
60
40
20
0
0
80 100 120 140
40 60
20
Maximum Allowable Ambient Temperature (℃)
Figure.8
1
On-State Power Loss Characteristics-2
0.1
Steady State Value:
RTHJC=0.45K/W
(DC Operation)
0.01
0.001
0.001
Instantaneous On-state Voltage (V)
0.01
0.1
1
Square Wave Pulse Duration (s)
Figure.9 On State Voltage Drop Characteristics
Figure.10 Thermal Impedance ZthJC Characteristics
100
Instantaneous Gate Voltage (V)
Instantaneous On-state Current (A)
1000
180
10
(a)
(b)
1
Frequency Limited by PG(AV)
0.1
0.00
0.01
0.1
1
Instantaneous Gate Current (A)
Figure.11 Gate Characteristics
10
100
1000
10
MIMMK60A160B
Package Outline (Dimensions in mm)