MIMMK90A160UA 1600V 90A thyristor Module RoHS Compliant Features · Isolation voltage 3500 V~ · Industrial Standard Package · High Surge Capability · Glass Passivated Chips · Simple Mounting · Electrically Isolated by DBC Ceramic Applications · DC Motor Control and Drives · Battery Charges · Welders · Power Converters · Lighting Control · Heat and Temperature Control Advantages · Space and weight savings · Improved temperature and power cycling ABSOLUTE MAXIMUM RATINGS Symbol Test Condition VRRM TC=25°C unless otherwise specified Value Unit 1600 V IT(AV) TC=85 , 180° conduction, half sine wave; 90 A IT(RMS) as AC switch; 190 A TJ=45 , t=10ms (50Hz), sine, VR=0; 1500 TJ=45 , t=8.3 ms (60Hz), sine, VR=0; 1650 TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 1350 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 1400 11.2 ITSM TJ=45 , t=10ms (50Hz), sine, VR=0; I2t TJ=45 , t=8.3 ms (60Hz), sine, VR=0; A TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 13.6 9.1 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 9.8 IDRM/IRRM TJ=130 , VD=VR=1600V, gate open circuit; 20 mA dV/dt TJ =130 , exponential to 67% rated VDRM 500 V/us VISOL 50Hz, all terminals shorted, t=1s, IISOL≤1mA ; 3500 V~ TJ Max. junction operating temperature range -40～130 TSTG Max. storage temperature range -40～150 K A2s MIMMK90A160UA ELECTRICAL CHARACTERISTICS Symbol Test Condition TC=25°C unless otherwise specified Min. Typ. Max. Unit 16.7% x p x IAV < I < p x IAV,TJ =130°C; 0.80 V I > p x IAV , TJ =130°C; 0.85 V 16.7% x p x IAV < I < p x IAV,TJ =130°C; 2.37 mΩ I > p x IAV , TJ =130°C; 2.25 mΩ IH VAK= 6V, resistive load; 250 mA IL Anode supply =6V, resistive load=1Ω, 400 mA VTO rt gate pulse =10V, 100us; VTM ITM=282A, td=10 ms, half sine PGM tp≤5ms, TJ=125°C; 12 W PGM(AV) f=50Hz, TJ =125°C; 3 W 3 A 10 V IGM -VGT 1.60 V tp≤5ms, TJ =125°C; VA=6V, RA=1Ω, TJ =-40°C; VGT IGT VGD IGD di/dt 4 VA=6V, RA=1Ω; 2.5 VA=6V, RA=1Ω, TJ=125°C; 1.7 VA=6V, RA=1Ω, TJ=-40°C; 270 VA=6V, RA=1Ω; 150 VA=6V, RA=1Ω, TJ=125°C; 80 VAK=VDRM, TJ=125 V mA 0.25 V 6 mA 150 A/us TJ= 25 , VD=0.67VDRM, ITM =345A, Ig = 500mA, tr< 0.5 µs, tp > 6 µs THERMAL AND MECHANICAL CHARACTERISTICS Symbol Test Condition TC=25°C unless otherwise specified value Unit Rthjc DC operation,per junction; 0.35 K/W RTHCS Mounting surface smooth,flat and greased,per junction 0.1 K/W Md Weight Mounting torque(M5) Terminal connection torque(M5) Typical value 3 to 5 N·m 105 g MIMMK90A160UA Characteristic curves 130 RTHJC(DC)=0.35K/W 120 110 Conduction angle 100 90 30○ 80 60○ 90○ 120○ 70 0 Maximun allowable case tem (℃) Maximun allowable case tem (℃) 130 180○ 120 110 100 Conduction period 90 30○ 80 70 60 120 40 80 Average forward current(A) RTHJC(DC)=0.35 K/W 0 180○ 120○ 90○ 60○ 30○ RMS limit 100 80 60 40 Conduction angle 20 Per junction TJ=130℃ 0 0 40 80 Average on-state current(A) Maximun average on-state power loss (W) Maximun average on-state power loss (W) 160 120 120 200 180 160 140 120 100 RMS limit 80 Conduction period 60 40 Per junction TJ=130℃ 20 0 0 1500 At any rated load condition and with rated VRRM applied following surge 1300 Initial TJ=130℃ @60Hz 0.0083 s @50Hz 0.01 s 1100 Per junction 700 100 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Figure 5. Maximum Non-Repetitive Surge Current 20 40 60 80 100 120 140 160 180 Average on-state current(A) Figure 4. on-state power loss characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 60 120 Average on-state current (A) DC 180○ 120○ 90○ 60○ 30○ 180 Figure 3. on-state power loss characteristics 900 DC Figure 2. current rating characteristics Figure 1. current rating characteristics 140 60○ 90○ 120 ○ 180○ 1800 1600 Maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. Initial T = 130℃ J no voltage reapplied rated VRRM reapplied 1400 1200 1000 800 600 0.01 Per junction 0.1 Pulse Train Duration (s) 1 Figure 6. Maximum Non-Repetitive Surge Current MIMMK90A160UA 350 Maximum Total On-state Power Loss (W) Maximum Total On-state Power Loss (W) 350 180○ 120○ 90○ 60○ 30○ 300 250 200 Conduction angle 150 100 Per module TJ=125℃ 50 0 0 40 80 120 200 160 Total RMS Output Current (A) 240 300 Per junction 1 1K/W 2K/W 100 50 0 60 0 20 40 80 100 120 140 Maximum Allowable Ambient Temperature (℃) 1 Steady State Value: RTHJC=0.35K/W (DC Operation) 0.1 100 Rectangular gate pulse 0.1 0.01 1 Square Wave Pulse Duration (s) (1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5μs, tp≥6μs b)Recommended load line for ≤30% rated di/dt:15V, (a) 40Ω (b) TJ=-40℃ TJ=25℃ TJ=125℃ (4) VGD (3) (2) (1) Frequency Limited by PG(AV) IGD 0.01 On-State Power Loss Characteristics-2 0.1 10 Figure.10 Thermal Impedance ZthJC Characteristics Figure.9 On State Voltage Drop Characteristics 0.1 0.001 0.7K/W 150 0.01 0.001 2 3 Instantaneous On-state Voltage (V) 1 0.4K/W 200 Transient Thermal Impedance ZthJC(K/W) TJ=130℃ 10 Instantaneous Gate Voltage (V) Instantaneous On-state Current (A) TJ=25℃ 10 0.3K/W Figure.8 100 1 0.2K/W 250 Figure 7. On-State Power Loss Characteristics-1 1000 0 RTHSA=0.1K/W-Delta R 1 Instantaneous Gate Current (A) Figure.11 Gate Characteristics 10 100 1000 MIMMK90A160UA Package Outline (Dimensions in mm)