R6006ANX Datasheet Nch 600V 6A Power MOSFET lOutline VDSS 600V RDS(on) (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing lApplication Bulk Reel size (mm) - Tape width (mm) - Type Basic ordering unit (pcs) Switching Power Supply Taping code 500 - Marking R6006ANX lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit VDSS 600 V Tc = 25C ID *1 6 A Tc = 100C ID *1 2.9 A 24 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 2.4 mJ Avalanche energy, repetitive EAR *4 1.9 mJ Avalanche current IAR *3 3 A Power dissipation (Tc = 25C) PD 40 W Junction temperature Tj 150 C Tstg -55 to +150 C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.01 - Rev.B Data Sheet R6006ANX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit 50 V/ns VDS = 480V, ID = 6A Drain - Source voltage slope dv/dt Tj = 125C lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.125 C/W Thermal resistance, junction - ambient RthJA - - 70 C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 C lElectrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 6A - 700 - V Tj = 25C - 0.1 100 mA Tj = 125°C - - 1000 IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2.5 - 4.5 V - 0.9 1.2 W Tj = 125°C - 1.9 - f = 1MHz, open drain - 7.6 - VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS VGS = 10V, ID = 3A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25C RG 2/13 W 2012.01 - Rev.B Data Sheet R6006ANX lElectrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 1.7 3.5 - Transconductance gfs *6 VDS = 10V, ID = 3.0A Input capacitance Ciss VGS = 0V - 520 - Output capacitance Coss VDS = 25V - 380 - Reverse transfer capacitance Crss f = 1MHz - 25 - Effective output capacitance, energy related Co(er) - 25 - Effective output capacitance, time related Turn - on delay time VGS = 0V VDS = 0V to 480V Co(tr) 25 - VDD ⋍ 300V, VGS = 10V - 22 - ID = 3A - 18 - td(off) *6 RL = 100W - 50 100 tf *6 RG = 10W - 35 70 tr *6 Rise time Turn - off delay time Fall time pF pF - td(on) *6 S ns lGate Charge characteristics (Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *6 VDD ⋍ 300V - 15 - Gate - Source charge Qgs *6 ID = 6A - 4 - Gate - Drain charge Qgd *6 VGS = 10V - 6 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 6A - 6.0 - nC V *1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25 C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/13 2012.01 - Rev.B Data Sheet R6006ANX lBody diode electrical characteristics (Source-Drain) (Ta = 25C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 6 A - - 24 A - - 1.5 V - 302 - ns - 2.0 - mC - 13 - A - 300 - A/ms Tc = 25C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 6A trr *6 Reverse recovery time Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 6A di/dt = 100A/ms Tj = 25C lTypical Transient Thermal Characteristics Symbol Value Rth1 0.342 Rth2 1.15 Rth3 2.19 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Unit Cth1 0.00138 Cth2 0.0146 Cth3 0.452 Ws/K 2012.01 - Rev.B Data Sheet R6006ANX Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 120 100 100 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] lElectrical characteristic curves 80 60 40 Operation in this area is limited by RDS(ON) 1 PW = 100us PW = 1ms PW = 10ms 0.1 20 Ta = 25ºC Single Pulse 0.01 0 0 50 100 150 200 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/13 2012.01 - Rev.B Data Sheet R6006ANX lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 3000 4 Avalanche Power Losses : PAR [W] Avalanche Current : IAR [A] Ta = 25ºC VDD=50V,RG=25Ω VGF=10V,VGR=0V 3 2 1 0 0.01 0.1 1 10 Ta = 25ºC 2500 2000 1500 1000 500 0 1.0E+04 100 Coil Inductance : L [mH] 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/13 2012.01 - Rev.B Data Sheet R6006ANX lElectrical characteristic curves Fig.8 Typical Output Characteristics(II) Fig.7 Typical Output Characteristics(I) 6 5 10.0V 6.0V Drain Current : ID [A] 7.0V 6.5V 4 4 Ta = 25ºC Pulsed Drain Current : ID [A] 5 5.5V 3 2 5.0V 1 10.0V Ta = 25ºC Pulsed 8.0V 8.0V 7.0V 6.5V 3 6.0V 5.5V 2 5.0V 1 VGS= 4.5V VGS= 4.5V 0 0 0 5 10 15 20 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.10 Tj = 150°C Typical Output Characteristics(II) Fig.9 Tj = 150°C Typical Output Characteristics(I) 3 6 Ta = 150ºC Pulsed 5 10V 8.0V 7.0V 6.5V Ta = 150ºC Pulsed 6.0V 10V 4 Drain Current : ID [A] Drain Current : ID [A] 1 5.5V 3 2 VGS = 4.5V 1 6.5V 5.5V 2 VGS= 4.5V 1 0 0 0 5 10 15 0 20 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 7/13 2012.01 - Rev.B Data Sheet R6006ANX Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 900 100 VDS = 10V Pulsed 850 10 Drain Current : ID [A] 800 750 700 650 600 1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 550 0.001 500 -50 0 50 100 0 150 Junction Temperature : Tj [°C] 2 4 6 8 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 6 100 5 VDS = 10V ID = 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 4 3 2 1 0 -50 0 50 100 VDS = 10V Pulsed 1 0.1 Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC 0.01 0.001 0.001 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 0.01 0.1 1 10 Drain Current : ID [A] 8/13 2012.01 - Rev.B Data Sheet R6006ANX lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 3 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 3 Ta = 25ºC Pulsed 2.5 2.5 2 VGS = 10V Pulsed 2 ID= 6.0A 1.5 1.5 ID = 6.0A 1 ID = 3.0A 0.5 ID= 3.0A 0.5 0 0 1 5 10 15 Gate - Source Voltage : VGS [V] 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [Ω] 10 VGS = 10V Pulsed 1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0 0.001 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/13 2012.01 - Rev.B Data Sheet R6006ANX lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 10000 4.0 1000 Ciss 100 Coss Coss Stored Energy : EOSS [uJ] Capacitance : C [pF] Ta = 25ºC Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 2.0 0.0 0.1 1 10 100 1000 0 Drain - Source Voltage : VDS [V] 200 400 600 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics Fig.20 Switching Characteristics 10000 tf Gate - Source Voltage : VGS [V] Switching Time : t [ns] 1000 Ta = 25ºC VDD ⋍ 300V VGS = 10V RG = 10Ω Pulsed td(off) 100 10 td(on) tr Ta = 25ºC VDD ⋍ 300V ID = 6A RG = 10Ω Pulsed 10 5 0 1 0.01 0.1 1 10 100 5 10 15 20 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0 10/13 2012.01 - Rev.B Data Sheet R6006ANX lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 1 0.1 100 Ta = 25ºC di / dt = 100A / μs VGS = 0V Pulsed 10 0.01 0 0.5 1 1.5 Source - Drain Voltage : VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.1 1 10 Inverse Diode Forward Current : IS [A] 11/13 2012.01 - Rev.B Data Sheet R6006ANX lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 12/13 2012.01 - Rev.B Data Sheet R6006ANX lDimensions (Unit : mm) D TO-220FM E A E1 A1 A A2 A4 F φp b1 L Q c e b DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x x A MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381 INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189 0.10 0.106 0.11 0.453 0.118 0.083 - 0.118 0.126 0.492 0.134 0.122 0.015 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 13/13 2012.01 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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