2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSST8 zFeatures 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02 Each lead has same dimensions zInner circuit zApplication Switching zPackaging specifications Package (6) (5) ∗2 ∗2 Taping TR Code Type (7) (8) Basic ordering unit (pieces) 3000 TT8M2 ∗1 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) <Tr1 : Nch> Symbol Limits Unit Drain−source voltage Parameter VDSS 30 V Gate−source voltage VGSS ±12 V Continuous ID ±2.5 A Pulsed IDP ±10 A 0.8 A 10 A Drain current Source current (Body diode) Continuous IS Pulsed ISP ∗1 ∗1 ∗1 Pw≤10µs, Duty cycle≤1% www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/8 2009.06 - Rev.A TT8M2 Data Sheet <Tr2 : Pch> Symbol Limits Unit Drain−source voltage Parameter VDSS −20 V Gate−source voltage VGSS ±10 V ±2.5 A ±10 A −0.8 A −10 A Limits Unit Drain current Source current (Body diode) Continuous ID Pulsed IDP Continuous IS Pulsed ISP ∗1 ∗1 ∗1 Pw≤10µs, Duty cycle≤1% <Tr1 AND Tr2> Symbol Parameter ∗2 1.25 1.0 W / TOTAL W / ELEMENT Total power dissipation PD Channel temperature Tch 150 °C Range of Storage temperature Tstg −55 to +150 °C ∗2 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) < Characteristics for the Tr1( Nch ).> Symbol Parameter Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 0.5 − − − 2.2 − − − − − − − − − − Typ. − − − − 65 70 95 − 180 60 35 7 30 20 20 3.2 0.9 0.4 Max. ±10 − 1 1.5 90 95 130 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=4.5V ID=2.5A, VGS=4V ID=2.5A, VGS=2.5V VDS=10V, ID=2.5A VDS=10V VGS=0V f=1MHz VDD 15V ID=1.2A VGS=4.5V RL 12.5Ω RG=10Ω VDD 15V, ID=2.5A VGS=4.5V RL 6Ω, RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − 1.2 V Conditions IS= 2.5A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/8 2009.06 - Rev.A TT8M2 Data Sheet zElectrical characteristics (Ta=25°C) < Characteristics for the Tr2( Pch ).> Symbol Min. Parameter Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − RDS (on) ∗ resistance − − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ 2.5 − − − − − − − − − − Typ. − − − − 49 68 100 140 − 1270 100 90 9 30 120 85 12 2.5 2.0 Max. ±10 − −1 −1.0 68 95 150 280 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.5A, VGS= −4.5V ID= −1.2A, VGS= −2.5V ID= −1.2A, VGS= −1.8V ID= −0.5A, VGS= −1.5V VDS= −10V, ID= −2.5A VDS= −10V VGS=0V f=1MHz VDD −10V ID= −1.2A VGS= −4.5V RL 8.3Ω RG=10Ω VDD −10V, ID= −2.5A VGS= −4.5V RL 4Ω, RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −2.5A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/8 2009.06 - Rev.A TT8M2 Data Sheet zElectrical characteristics curves <Nch> 1.5 VGS= 1.5V 1 VGS= 4.5V VGS= 4.0V VGS= 2.5V 2 1.5 VGS= 1.5V 1 0.5 0.5 VGS= 1.2V 0.2 0.4 0.6 0.8 2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 10 6 8 0 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 10 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 300 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current 4/8 2 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1.5 VGS= 4.0V Pulsed DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1 GATE-SOURCE VOLTAGE : VGS[V] 1000 0.1 0.5 Fig.3 Typical Transfer Characteristics 10 VGS= 2.5V Pulsed 0.01 10 VGS= 4.5V Pulsed DRAIN-CURRENT : ID [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 VGS= 2.5V VGS= 4.0V VGS= 4.5V 1000 0.1 Ta= 75°C Ta= 25°C Ta= - 25°C Fig.2 Typical Output Characteristics(Ⅱ) Ta= 25°C Pulsed 1 Ta= 125°C DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 0.1 1 0.001 0 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 0 VDS= 10V Pulsed VGS= 1.2V 0 0 1000 10 Ta=25°C Pulsed DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS=4.0V VGS= 2.5V VGS= 2.0V 2 2.5 Ta=25°C Pulsed DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 2.5 10 Ta=25°C Pulsed 250 ID = 1.2A 200 ID = 2.5A 150 100 50 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage 2009.06 - Rev.A TT8M2 VGS=0V Pulsed 5 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1000 Ta=25°C f=1MHz VGS=0V Ciss 2 100 Coss 1 Crss 0 0 10 0 1 2 3 4 0.01 0.1 1 10 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 100 Ta=25°C RG=10Ω VDD = 15V Pulsed VGS=4.5V tf SWITCHING TIME : t [ns] 1000 Ta=25°C VDD = 15V 4 ID = 2.5A RG=10Ω Pulsed 3 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : VGS [V] REVERSE DRAIN CURRENT : Is [A] 10 Data Sheet 100 td(off) 10 td (on) tr 1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.13 Switching Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/8 2009.06 - Rev.A TT8M2 Data Sheet <Pch> 4 2 Ta=25°C Pulsed 1 VGS= -1.3V 3 VGS= -1.5V VGS= -1.3V 2 VGS= -1.2V 1 VGS= -1.1V 0 0 0.4 0.6 0.8 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 2 4 6 8 10 0 0.5 1 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 1 100 10 0.1 10 DRAIN-CURRENT : -ID [A] 1 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 10 VGS= -1.5V Pulsed 0.1 10 Resistance vs. Drain Current(Ⅲ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 10 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 6/8 10 Fig.6 Static Drain-Source On-State 100 0.1 1 DRAIN-CURRENT : -ID [A] 10 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 10 10 Resistance vs. Drain Current(Ⅱ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1.5 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.1 1000 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 Ta=25°C Pulsed 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 0.001 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 0.2 VDS= -10V Pulsed VGS= -1.1V 0 1000 10 Ta=25°C Pulsed VGS= -10V VGS= -1.8V DRAIN CURRENT : -ID [A] VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 3 DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 4 100 VDS= -10V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.06 - Rev.A TT8M2 Data Sheet 250 ID = -2.5A 200 150 100 50 ID = -1.2A 0 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0 2 4 6 8 GATE-SOURCE VOLTAGE : -VGS[V] 0.4 0.6 0.8 10000 Ciss 1000 Coss Crss 100 Ta=25°C f=1MHz VGS=0V 0.01 1 1.2 3 2 Ta=25°C VDD = -10V ID = -2.5A RG=10Ω Pulsed 1 2 4 6 8 10 12 14 Fig.12 Dynamic Input Characteristics Ta=25°C VDD = -10V VGS=-4.5V RG=10Ω Pulsed td (off) 1000 0 TOTAL GATE CHARGE : Qg [nC] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage SWITCHING TIME : t [ns] CAPACITANCE : C [pF] 0.2 SOURCE-DRAIN VOLTAGE : -VSD [V] 10000 4 0 0 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 5 VGS=0V Pulsed GATE-SOURCE VOLTAGE : -VGS [V] 10 Ta=25°C Pulsed REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 300 tf 100 10 td (on) tr 1 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.14 Switching Characteristics 7/8 2009.06 - Rev.A TT8M2 Data Sheet zMeasurement circuits < Nch > VGS ID Pulse Width VDS RL D.U.T. 90% 50% 10% VGS VDS 50% 10% 10% VDD RG 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform < Pch > Pulse width ID VDS VGS VGS 10% 50% 90% RL D.U.T. 10% VDD RG 50% VDS 90% td(on) tr ton Fig.3-1 Switching time measurement circuit 10% 90% td(off) tf toff Fig.3-2 Switching waveforms VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.4-1 Gate charge measurement circuit Fig.4-2 Gate charge waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. 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