ROHM RVQ040N05

4V Drive Nch MOSFET
RVQ040N05
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
TSMT6
1.0MAX
2.9
1.9
0.95 0.95
zFeatures
1) Low On-resistance.
2) Space savingsmall surface mount package (TSMT6).
(5)
0.7
(4)
1.6
2.8
(6)
0.85
(2)
0~0.1
0.3~0.6
(1)
(3)
1pin mark
0.16
0.4
Each lead has same dimensions
zApplications
Switching
Abbreviated symbol : QG
zPackaging specifications
Package
Type
zInner circuit
(6)
Taping
(5)
(4)
TR
Code
Basic ordering unit (pieces)
3000
∗2
RVQ040N05
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
45
21
±4.0
±16
1.6
16
1.25
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
100
Unit
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
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1/5
2009.02 - Rev.A
Data Sheet
RVQ040N05
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
45
−
1.0
−
−
−
3.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
38
47
53
−
530
120
65
12
15
40
12
6.3
2.0
2.6
10
−
1
2.5
53
66
74
−
−
−
−
−
−
−
−
8.8
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=21V, VDS=0V
ID= 1mA, VGS=0V
VDS= 45V, VGS=0V
VDS= 10V, ID= 1mA
ID= 4A, VGS= 10V
ID= 4A, VGS= 4.5V
ID= 4A, VGS= 4.0V
VDS= 10V, ID= 4A
VDS= 10V
VGS=0V
f=1MHz
VDD 25V
ID= 2.0A
VGS= 10V
RL=12.5Ω
RG=10Ω
VDD 25V, ID= 4A
VGS= 5V
RL=6Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
1.2
Unit
V
Conditions
IS= 4.0A, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
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2/5
2009.02 - Rev.A
Data Sheet
RVQ040N05
zElectrical characteristic curves
4
3
VGS= 3.0V
Ta=25°C
Pulsed
VGS= 2.8V
2
VGS= 2.6V
1
VGS= 2.4V
4
1
0.2
0.4
0.6
0.8
VGS= 2.4V
VDS= 10V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
0
2
4
6
8
0
10
1
2
3
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
1000
100
VGS= 4.0V
VGS= 4.5V
VGS= 10V
10
1
10
1
10
0.1
DRAIN-CURRENT : ID[A]
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
1
10
0.1
1
VGS= 4.0V
Pulsed
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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DRAIN-CURRENT : ID[A]
100
10
VDS= 10V
Pulsed
10
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
0.1
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
1
VGS= 4.5V
Pulsed
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10
1
REVERSE DRAIN CURRENT : Is [A]
0.1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta= 25°C
Pulsed
0.1
10
0.001
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 2.6V
2
0
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 2.8V
VGS= 10V
VGS= 4.5
VGS= 4.0V
3
0
100
Ta=25°C
Pulsed
5
DRAIN CURRENT : ID[A]
VGS= 10V
VGS= 4.5
VGS= 4.0V
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
5
1
10
DRAIN-CURRENT : ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/5
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2009.02 - Rev.A
Data Sheet
RVQ040N05
10000
ID= 2.0A
50
ID= 4.0A
40
td(off)
1000
tf
100
td(on)
10
tr
30
1
0
5
10
15
20
0.01
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
Ciss
DRAIN CURRENT : ID (A)
CAPACITANCE : C [pF]
1
10
1000
100
Crss
Coss
Operation in this area is limited
by RDS(ON) (VGS= 10V)
8
6
Ta=25°C
VDD= 25V
ID= 4.0A
RG=10Ω
Pulsed
4
2
0
0
2
4
6
8
10
12
TOTAL GATE CHARGE : Qg [nC]
Fig.11 Switching Characteristics
10000
Ta=25°C
f=1MHz
VGS=0V
0.1
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Dynamic Input Characteristics
Pw=100us
10
Pw=1ms
Pw=10ms
1
DC operation
0.1
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
0.01
10
0.01
0.1
1
10
0.1
100
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Maximum Safe Operating Aera
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
Ta=25°C
VDD= 25V
VGS= 10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS [V]
Ta=25°C
Pulsed
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
60
10
1
0.1
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 100 °C/W
<Mounted on a CERAMIC board>
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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4/5
2009.02 - Rev.A
Data Sheet
RVQ040N05
zMeasurement circuit
Pulse Width
VGS
ID
VDS
RL
D.U.T.
90%
50%
10%
VGS
VDS
50%
10%
10%
RG
VDD
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.2-2 Gate Charge Waveform
5/5
2009.02 - Rev.A
Appendix
Notes
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wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
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Please be sure to implement in your equipment using the Products safety measures to guard against the
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Appendix-Rev4.1