Die Size - 7.1 x 5.1 mm2 – RHRG75120 HYPERFAST Rectifier

RHRG75120
Hyperfast Rectifier Diode Chip
1200V, 75A, VF 2.6V, trr = 60ns
Part
VRRM
IF(AV)n
VF Typ
trr Typ
Die Size
RHRG75120
1200V
75A
2.6V
60ns
7.1 x 5.1 mm
2
See page 2 for ordering part numbers & supply formats
Features
Applications
•
General Purpose
•
Hyperfast Soft Recovery, trr = 60ns @ IF = 75A
•
Free Wheeling Diode
•
1200V Reverse Voltage & High Reliability
•
Avalanche Energy Rated
Maximum Ratings
Symbol
Parameter
Ratings
Units
VRRM
Peak Repetitive Reverse Voltage
1200
V
VRWM
Working Peak Reverse Voltage
1200
V
VR
DC Blocking Voltage
1200
V
1
IF(AV)
Average Rectified Forward Current @ TC = 42°C
75
A
IFSM
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
500
A
50
mJ
-65 to 175
°C
3
EAVL
Avalanche Energy
TJ, TSTG
Operation Junction & Storage Temperature
Electrical Characteristics, TJ = 25° unless otherwise noted
Parameter
Test Conditions
2
VF
Forward Voltage
IF = 75A
2
IR
Reverse Current
trr
Reverse Recovery Time3
VR = 1200V
Typ
Max
Units
TC = 25°C
-
2.6
3.2
V
TC = 150°C
-
1.7
2.6
V
TC = 25°C
-
-
250
µA
TC = 150°C
mA
-
-
2
IF = 1A, dlF/dt = 100A/µs
-
60
-
IF =75A, dlF/dt = 100A/µs
-
85
-
3
IF =75A, dIF/dt = 100A/µs
-
60
-
3
IF =75A, dIF/dt = 100A/µs
-
25
-
ta
Current Rise Time
tb
Current Fall Time
1.
2.
3.
Min
ns
Notes:
Performance will vary based on assembly technique and substrate choice
Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Tested in discrete package, not subject to 100% production test at wafer level
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page1
Symbol
Ordering Guide
Part Number
Format
Detail / Drawing
RHRG75120MW
Un-sawn wafer, electrical rejects inked
Page 2
RHRG75120MF
Sawn wafer on film-frame
Page 3
RHRG75120MD
Singulated die / chips in waffle pack
Page 3
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Die Drawing – Dimensions in µm
7162
40
6172
Passivated area
4140
5130
ANODE
Chip backside is CATHODE
Mechanical Data
Parameter
Units
Chip Dimensions Un-sawn
7162 x 5130
µm
Chip Thickness (Nominal)
250
µm
Anode Pad Size
6172 x 4140
µm
Wafer Diameter
127 (subject to change)
mm
Saw Street
80 (subject to change)
µm
Wafer orientation on frame
Wafer notch parallel with frame flat
Topside Metallisation & Thickness
Al
6
µm
Backside Metallisation & Thickness
V/Ni/Ag
0.3
µm
Silicon Nitride
Recommended Die Attach Material
Soft Solder or Conductive Epoxy
Recommended Wire Bond - Anode
Al 500µm X3
Page2
Topside Passivation
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Sawn Wafer on Film-Frame – Dimensions (inches)
Die in Waffle Pack – Dimensions (mm)
A
X
X = 5.94mm ±0.13mm pocket size
Y = 8.23mm ±0.13mm pocket size
Z = 0.51mm ±0.05mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 6 X 4 (24)
Y
Z
X
OVERALL TRAY SIZE
Size = 50.67mm ±0.25mm
Height = 3.94mm ±0.13mm
Flatness = 0.30mm
DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO
RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS
GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR
DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY
ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use
provided in the labelling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page3
1. Life support devices or systems are devices or systems which,
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