JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) TO-92 FEATURE · power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7 V Collector cut-off current ICBO VCB= 600V , IE=0 100 μA Collector cut-off current ICEO VCE= 400V, IB=0 200 μA Emitter cut-off current IEBO VEB=7V, IC=0 100 μA hFE(1) VCE= 20V, IC= 20mA 14 hFE(2) VCE= 10V, IC= 0.25 mA 5 29 DC current gain Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V Transition frequency fT Fall time tf Storage time tS VCE= 20V, IC=20mA f = 1MHz IC=50mA, IB1=-IB2=5mA, VCC=45V 8 MHz 0.3 μs 1.5 μs CLASSIFICATION OF hFE(1) Range 14-17 www.cj-elec.com 17-20 20-23 23-26 26-29 1 D,Jun,2016 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 D,Jun,2016 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 D,Jun,2016