ACE7409B(VER1.1)

ACE7409B
P-Channel 30-V (D-S) MOSFET
Description
The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
Packaging Type
 VDS (V) = -30 V
 ID =-30A (at VGS=-10V)
 < 14mΩ (VGS=-10V)
 < 20mΩ (VGS=-4.5V)
Ordering information
ACE7333M XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Absolute Maximum Ratings @TA=25℃
unless otherwise noted
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDSS
30
V
VGSS
±20
V
Gate-Source Voltage
O
Drain Current (Continuous)a
TA=25 C
O
TA=70 C
Drain Current (Pulse)
c
ID
IDM
O
Power Dissipation b
TA=25 C
O
TA=70 C
Operating Temperature/ Storage Temperature
PD
TJ,TSTG
30
22
A
82
25
16
-55 to 150
W
O
C
VER 1.1
1
ACE7409B
P-Channel 30-V (D-S) MOSFET
Electrical Characteristics @TA=25℃
Parameter
unless otherwise noted
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
V(BR)DSS
VGS=0V, ID=-250uA
IDSS
VDS=-30V, VGS=0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, IDS = -250μ A
Gate Leakage Current
IGSS
VGS =±20V,VDS = 0V
Voltage
Zero Gate Voltage Drain
Current
Drain-Source On-state
Resistance
RDS(ON)
-30
-1
V
-1.3
-1
uA
-3
V
±100
nA
VGS=-10V,ID=-15A
11
14
VGS=-4.5V,ID=-10A
13
20
Forward Transconductance
gFS
VDS=-5V,ID=-8A
20
Diode Forward Voltage
VSD
IS=-2.1A ,VGS=0V
-0.8
mΩ
S
-1.3
V
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VGS=-10V,VDS=-15V
ID=-11A
68.12
8
nC
10.12
20.4
VGEN=-10V,VDS=-15V
RL=15Ω, RGEN=6Ω,
ID=-1A
8.96
ns
131.8
47.2
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS=0V ,VDS=8V
f=1MHz
3204.2
492
pF
415
Note:
A.
The maximum current rating is package limited.
B.
The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
C.
Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
D.
The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
E.
These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a
large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single
pulse rating.
F.
The maximum current rating is package limited.
G.
These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C
VER 1.1
2
ACE7409B
P-Channel 30-V (D-S) MOSFET
Typical Electrical And Thermal Characteristics
VER 1.1
3
ACE7409B
P-Channel 30-V (D-S) MOSFET
VER 1.1
4
ACE7409B
P-Channel 30-V (D-S) MOSFET
Packing Information
DFN3*3-8L
DFN3*3-8L
Symbol
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
θ
Dimensions In Millimeters
MIN
MAX
0.650
0.850
0.152REF
0~0.05
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
0.200
0.400
0.50
0.750
0.300
0.500
0.180
0.480
0~0.100
Dimensions In Inches
MIN
MAX
0.026
0.033
0.006REF
0~0.002
0.114
0.122
0.09
0.102
0.114
0.122
0.124
0.136
0.060
0.076
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0~0.004
0~0.100
0~0.004
0.315
9O
0.515
13O
0.012
9O
0.020
13O
VER 1.1
5
ACE7409B
P-Channel 30-V (D-S) MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
6