ACE1710B N-Channel Enhancement Mode MOSFET Description The ACE1710B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications Features 100V/1.5A RDS(ON) ＜280mΩ @ VGS = 10V High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation SOT23 -3LPackage Absolute Maximum Ratings TA=25℃ unless otherwise noted Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25℃ TA=70℃ Drain Current (Pulsed) Power Dissipation TA=25℃ ID 1.5 1.2 A IDM 5 A PD 1 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3 L Marking D 3 1 2 G S Ordering information ACE1710B XX + H Halogen - free Pb - free BM : SOT-23-3L VER 1.1 1 ACE1710B N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance Forward transconductance Diode forward voltage Maximum body-diode continuous current V(BR)DSS IDSS VGS(TH) IGSS RDS(ON) gFS VSD Test Conditions Static VGS=0V, ID=250µA VDS=100V, VGS=0V VGS=VDS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, ID=1A VDS=5V, ID=1A ISD=1.3A, VGS=0V Min Typ 100 110 1.2 1.8 250 Max 1.2 V µA V nA mΩ S V 1.6 A 1 2.5 ± 100 280 1.2 IS Unit Switching Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Qg Qgs Qgd td(on) tr td(off) tf VGS=10V, VDS=50V,ID=1.3A VGS=10V, RL=39Ω,ID=1.3A, VDS=50V, RG=1Ω 5.2 0.75 1.4 6 10 10 6 nC nC nC ns ns ns ns 190 22 13 pF pF pF Dynamic Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VGS=0V,VDS=50V F=1.0MHz Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board,t≤10sec. 3. Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%. 4. Guaranteed by design,not subject to production VER 1.1 2 ACE1710B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Vds Drain-Source Voltage(V) Figure 1 Output Characteristics Vgs Gate-Source Voltage(V) Figure 2 Transfer Characteristics ID-Drain Current(A) Figure 3 Rdson – Drain Current TJ -Junction Temperature (℃) Figure 4 Rdson-Junction Temperature Qg Gate Charge(nC) Figure 5 Gate Charge Vsd Source-Drain Voltage(V) Figure 6 Source – Drain Diode Forward VER 1.1 3 ACE1710B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Vds Drain-Source Voltage(V) Figure 7 Capacitance vs Vds TJ -Junction Temperature (℃) Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage(V) Figure 8 Safe Operation Area TJ -Junction Temperature (℃) Figure 10 Power De-rating Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance VER 1.1 4 ACE1710B N-Channel Enhancement Mode MOSFET Packing Information SOT-23-3L SOT-23-3L Unit : mm VER 1.1 5 ACE1710B N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6