ACE1715B 1715

ACE1715B
N-Channel Enhancement Mode MOSFET
Description
The ACE1715B uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features





VDS (V) = 150V
ID = 1.5 (VGS = 10V)
RDS(ON) < 450mΩ (VGS = 10V)
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Absolute Maximum Ratings TA=25℃
unless otherwise noted
Parameter
Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
150
V
VGSS
±20
V
O
Drain Current (Continuous) * AC
TA=25 C
O
TA=70 C
Drain Current (Pulse) * B
ID
IDM
O
Power Dissipation
TA=25 C
O
TA=70 C
PD
1.5
1.0
A
6
2
1.3
Operating temperature / storage temperature TJ,TSTG -55 to 150
W
O
C
Packaging Type
SOT-23-6L
Marking
D
D
D
D
.
G
1715
S
Ordering information
ACE1715B XX + H
Halogen - free
Pb - free
GM : SOT-23-6L
VER 1.1
1
ACE1715B
N-Channel Enhancement Mode MOSFET
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
150
Zero Gate Voltage Drain Current
IDSS
VDS=150V, VGS=0V
Gate Threshold Voltage
IGS(TH)
VGS= VDS, ID=250uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
Forward Transconductance
RDS(ON)
VGS=10V, ID=1.5A
400
gFS
VDS=15V, ID=1.5A
5
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=2A, VGS=0V
1.5
V
2.0
IS
1
uA
2.5
V
±100
nA
450
mΩ
S
1.2
V
2
A
Switching
Total Gate Charge
Qg
8
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.1
Turn-On Delay Time
td(on)
8
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VGS=10V,VDS=75V, ID=1.5A
VGS=10V ,VDS=75V,
RL=75Ω,RGEN=6Ω
1.4
nC
10
ns
20
15
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS=0V ,VDS=75V,
F=1MHz
235
36
pF
20
Note:
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.1
2
ACE1715B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Vds Drain Source Voltage(V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage(V)
Figure 2 Transfer Characteristics
ID-Drain Current(A)
Figure 3 Rdson – Drain Current
TJ -Junction Temperature (℃)
Figure 4 Rdson-Junction Temperature
Qg Gate Charge(nC)
Figure 5 Gate Charge
Vsd Source-Drain Voltage(V)
Figure 6 Source – Drain Diode Forward
VER 1.1
3
ACE1715B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Vds Drain -Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ -Junction Temperature (℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain -Source Voltage(V)
Figure 8 Safe Operation Area
TJ -Junction Temperature (℃)
Figure 10 Power De-rating
Square Wave Pluse Duration)sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
VER 1.1
4
ACE1715B
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-6L
Units: mm
VER 1.1
5
ACE1715B
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
6