ACE3006M N-Channel Enhancement Mode MOSFET Description ACE3006M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Absolute Maximum Ratings Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 ID 30 IDM 100 IS 30 A PD 50 W TJ, Tstg -55 to 175 °C Parameter Continuous Drain Current Pulsed Drain Current TC =25°C b Continuous Source Current (Diode Conduction) Power Dissipation a TC =25°C Operating Junction and Storage Temperature Range Unit V A VER 1.1 1 ACE3006M N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Case Symbol Maximum Unit RθJA 40 RθJC 3 °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics. b. Pulse width limited by maximum junction temperature. Packaging Type TO-252 G D S Ordering information ACE3006M XX + H Halogen - free Pb - free YM : TO252 VER 1.1 2 ACE3006M N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V ±100 nA Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IDSS uA VDS = 48 V, VGS = 0 V, TJ = 55°C 25 Gate-Source Threshold Voltage On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) VDS = 5 V, VGS = 10 V 1 V 34 A VGS = 10 V, ID = 20 A 38 VGS = 4.5 V, ID = 17 A 50 mΩ Forward Transconductance gfs VDS = 15 V, ID = 20 A 22 S Diode Forward Voltage VSD IS = 15 A, VGS = 0 V 0.86 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.6 Turn-On Delay Time td(on) 10.0 Rise Time Turn-Off Delay Time 16.5 VDS = 30 V, VGS = 4.5 V, ID = 20 A 5.3 tr VDD = 30 V, RL = 1.5 Ω , ID = 20 A, VGEN = 10 12.8 td(off) V, RGEN = 6 Ω 53.1 ns tf 18.6 Input Capacitance Ciss 1711 Output Capacitance Coss ReverseTransfer Capacitance Crss Fall Time VDS = 15 V, VGS = 0 V, f =1 MHz nC 147 pF 134 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 3 ACE3006M N-Channel Enhancement Mode MOSFET Typical Performance Characteristics (N-Channel) ID-Drain Current (A) 1. On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE3006M N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS Drain to Source Voltage (V) 9. Safe Operating Area TJ –Junction Temperature(°C) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE3006M N-Channel Enhancement Mode MOSFET Packing Information TO-252 SYMBOL E L L1 L2 L3 L4 L5 D H b b2 b3 e A A1 c c2 D1 E1 θ DIMENSIONAL REQMTS MIN NOM MAX 6.40 6.60 6.731 1.40 1.52 1.77 2.743 REF 0.508 BSC 0.89 1.27 06.4 1.01 6.00 9.40 0.64 0.77 5.21 2.20 0 0.45 0.45 5.30 4.40 0。 6.10 6.223 10.00 10.40 0.76 0.88 0.84 1.14 5.34 5.46 2.286 BSC 2.30 2.38 0.127 0.50 0.60 0.50 0.58 10。 VER 1.1 6 ACE3006M N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7