ACE2304 Technology N-Channel Enhancement Mode MOSFET Description The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • 30V/3.2A, RDS(ON)=65mΩ@VGS=10V 30V/2.0A, RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application • • • • • • • Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Symbol Max Unit VDSS 30 V VGSS ±20 V TA=25℃ 3.2 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.6 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 1.25 Power Dissipation W PD TA=70℃ 0.8 O Operating Junction Temperature TJ 150 C Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 100 OC/W VER 1.2 1 ACE2304 Technology N-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3 3 Pin Symbol Description 1 G Gate 2 S Source 3 D Drain 1 2 Ordering information Selection Guide ACE2304 XX + Pb - free BM : SOT-23-3 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 30 Gate Threshold Voltage VGS(th) VD=VGS, ID=250uA 1.0 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=1.0V 1 VDS=30V, VGS=0V TJ=55℃ 10 On-State Drain Current ID(ON) Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage VDS≧4.5V, VGS=10V 6 VDS≧4.5V, VGS=4.5V 4 V 3.0 nA uA A VGS=10V, ID=3.2A 0.050 0.065 VGS=4.5V, ID=2.0A 0.065 0.090 gfs VDS=4.5V,ID=2.5A 4.6 VSD IS=1.25A, VGS=0V 0.82 Ω S 1.2 VER 1.2 V 2 ACE2304 Technology N-Channel Enhancement Mode MOSFET Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.0 Input Capacitance Ciss 240 Output Capacitance Coss Reverse Transfer Capacitance Crss 17 td(on) 8 20 12 30 17 35 8 20 Turn-On Time Turn-Off Time tr td(off) 4.5 VDS=15V, VGS=10V, ID=2.5 VDS=15V, VGS=0V, f=1MHz VDD=15RL=15, ID=1.0A, VGEN=10, RG=6Ω tf 10 nC 0.8 pF 110 nS Typical Performance Characteristics Output Characteristics VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current ID-Drain Current (A) Transfer Characteristics VGS-Gate-to-Source Voltage (V) Capacitance VDS-Drain-to-Source Voltage (V) VER 1.2 3 ACE2304 Technology Gate Charge Qg-Total Gate Charge (nC) Source-Drain Diode Forward Voltage VSD-Source-to-Drain Voltage (V) Threshold Voltage TJ-Temperature(℃) N-Channel Enhancement Mode MOSFET On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) On-Resistance vs. Gate-to-Source Voltage VGS-Gate-to-Source Voltage (V) Single Pulse Power Time (sec) VER 1.2 4 ACE2304 Technology N-Channel Enhancement Mode MOSFET Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VER 1.2 5 ACE2304 Technology N-Channel Enhancement Mode MOSFET Packing Information SOT-23-3 VER 1.2 6 ACE2304 Technology N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7