SSS1206H
120V N-Channel MOSFET
Main Product Characteristics
VDSS
120V
RDS(on)
4.7mΩ (typ.)
ID
180A
①
TO-247
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
180 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130 ①
IDM
Pulsed Drain Current ②
670
Power Dissipation ③
375
W
Linear Derating Factor
2.5
W/°C
VDS
Drain-Source Voltage
120
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
1148
mJ
IAS
Avalanche Current @ L=0.3mH
87.5
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSS1206H
120V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
0.4
°C/W
Junction-to-ambient (t ≤ 10s) ④
—
62
°C/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
°C/W
Electrical Characteristics @TA=25℃
unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
120
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
4.7
6.0
—
10.6
—
VGS(th)
Gate threshold voltage
2.0
—
4
—
2.2
—
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
201
—
Qgs
Gate-to-Source charge
—
88
—
Qgd
Gate-to-Drain("Miller") charge
—
36
—
VGS = 10V
td(on)
Turn-on delay time
—
41
—
VGS=10V, VDD =65V,
tr
Rise time
—
114
—
td(off)
Turn-Off delay time
—
90
—
tf
Fall time
—
100
—
ID =75A
Ciss
Input capacitance
—
5634
—
VGS = 0V
Coss
Output capacitance
—
657
—
Crss
Reverse transfer capacitance
—
12.6
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID= 1mA
VGS=10V,ID =75A
TJ = 125°C
VDS = VGS, ID =250μA
TJ = 125°C
VDS =120V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 50A,
nC
nS
pF
VDS=50V,
RL=0.87Ω,
RGEN=2.6Ω
VDS = 50V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
www.goodark.com
Min.
Typ.
Max.
Units
—
—
180 ①
A
—
—
670
A
—
0.9
1.3
V
Page 2 of 7
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=75A, VGS=0V, TJ = 25°C
Rev.1.0
SSS1206H
120V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 7
Rev.1.0
SSS1206H
120V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
www.goodark.com
Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.0
SSS1206H
120V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 5 of 7
Rev.1.0
SSS1206H
120V N-Channel MOSFET
Mechanical Data
TO-247 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
D2
E
E1
E2
E3
e
L
L1
P
P1
P2
Q
S
T
U
www.goodark.com
Min
4.900
2.300
1.900
1.160
1.150
1.960
1.950
2.960
2.950
0.590
0.580
20.900
16.250
1.050
15.700
13.100
4.900
2.400
19.800
3.500
2.400
5.600
9.800
6.000
Dimension In Millimeters
Nom
5.000
2.405
2.000
1.185
1.985
2.985
0.600
21.000
16.550
1.200
15.800
13.300
5.000
2.500
5.44BSC
19.950
3.600
2.500
6.15BSC
-
Max
5.100
2.510
2.100
1.260
1.220
2.060
2.020
3.060
3.020
0.660
0.620
21.100
16.850
1.350
15.900
13.500
5.100
2.600
Min
0.193
0.091
0.075
0.046
0.045
0.077
0.077
0.117
0.116
0.023
0.023
0.823
0.640
0.041
0.618
0.516
0.193
0.094
20.100
4.300
3.700
7.400
2.600
6.000
0.780
0.138
0.094
0.220
10.200
6.400
0.386
0.236
Page 6 of 7
Dimension In Inches
Nom
0.197
0.095
0.079
0.047
0.078
0.118
0.024
0.827
0.652
0.047
0.622
0.524
0.197
0.098
0.214BSC
0.785
0.142
0.098
0.242BSC
-
Max
0.201
0.099
0.083
0.050
0.048
0.081
0.080
0.120
0.119
0.026
0.024
0.831
0.663
0.053
0.626
0.531
0.201
0.102
0.791
0.169
0.146
0.291
0.102
0.236
0.402
0.252
Rev.1.0
SSS1206H
120V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSS1206H
Package (Available)
TO-247
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-247
30
11
330
1980
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
www.goodark.com
Page 7 of 7
Rev.1.0