SSF6N60G
600V N-Channel MOSFET
Main Product Characteristics
VDSS
600V
RDS(on)
1.32Ω (typ.)
ID
6A
TO-251
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
6
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
3.8
IDM
Pulsed Drain Current②
24
Power Dissipation③
125
W
Linear Derating Factor
1.00
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=30mH
421
mJ
IAS
Avalanche Current @ L=30mH
5.3
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.1
SSF6N60G
600V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case③
—
1.00
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
110
℃/W
Electrical Characteristics@TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
600
—
—
—
1.32
1.5
—
2.92
—
2
—
4
—
1.86
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
15.6
—
Qgs
Gate-to-Source charge
—
4.7
—
Qgd
Gate-to-Drain("Miller") charge
—
6.3
—
td(on)
Turn-on delay time
—
13.8
—
tr
Rise time
—
24.9
—
td(off)
Turn-Off delay time
—
35.5
—
tf
Fall time
—
22.5
—
Ciss
Input capacitance
—
681
—
Coss
Output capacitance
—
89
—
Crss
Reverse transfer capacitance
—
3.5
—
Ω
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 3A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 600V,VGS = 0V
TJ = 125℃
nA
VGS =30V
VGS = -30V
ID = 6A,
nC
VDS=480V,
VGS = 10V
ns
VGS=10V, VDS=300V,
RGEN=25Ω,ID=6A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
6
A
—
—
24
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.91
1.4
V
IS=6A, VGS=0V
trr
Reverse Recovery Time
—
656
—
ns
TJ = 25°C, IF =6A,
Qrr
Reverse Recovery Charge
—
3513
—
nC
di/dt = 100A/μs
www.goodark.com
Page 2 of 7
Rev.1.1
SSF6N60G
600V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 7
Rev.1.1
SSF6N60G
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
www.goodark.com
Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.1
SSF6N60G
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 5 of 7
Rev.1.1
SSF6N60G
600V N-Channel MOSFET
Mechanical Data
www.goodark.com
Page 6 of 7
Rev.1.1
SSF6N60G
600V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF6N60G
Package (Available)
TO-251（IPAK）
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-251
80
60
4800
24000
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
www.goodark.com
Page 7 of 7
Rev.1.1