SSF4607D
30V P-Channel MOSFET
Main Product Characteristics
VDSS
-30V
RDS(on)
19mΩ(typ.)
ID
-25A
D
G
S
①
Marking and Pin
TO-252
Schematic Diagram
Assignment
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V(Silicon Limited)
-25 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
-20 ①
IDM
Pulsed Drain Current ②
-60
PD @TC = 25°C
Power Dissipation
41
W
VDS
Drain-Source Voltage
-30
V
VGS
Gate-to-Source Voltage
± 20
V
-55 to + 150
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
Units
A
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
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Typ.
Max.
Units
Junction-to-case③
—
3
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
25
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
50
℃/W
Page 1 of 8
Rev.1.0
SSF4607D
30V P-Channel MOSFET
Electrical Characteristics @TA=25℃
unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
-30
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
19
35
—
29
58
VGS(th)
Gate threshold voltage
-1.2
—
-2.4
—
-1.4
—
IDSS
Drain-to-Source leakage current
—
—
-1
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
27
—
Qgs
Gate-to-Source charge
—
3.6
—
Qgd
Gate-to-Drain("Miller") charge
—
9.1
—
td(on)
Turn-on delay time
—
10.7
—
tr
Rise time
—
39
—
td(off)
Turn-Off delay time
—
25.8
—
tf
Fall time
—
6.4
—
Ciss
Input capacitance
—
1188
—
Coss
Output capacitance
—
173
—
Crss
Reverse transfer capacitance
—
139
—
mΩ
V
Conditions
VGS = 0V, ID = -250μA
VGS=-10V,ID = -6A
VGS=-4.5V,ID=-5A
VDS = VGS, ID = -250μA
TJ = 125℃
μA
nA
VDS = -24V,VGS = 0V
VGS =20V
VGS = -20V
ID = -20A,
nC
VDS=-25V,
VGS = -10V
nS
VGS=-10V, VDS =-15V,
RL=0.75Ω,ID =-20A
VGS = 0V,
pF
VDS =-15V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
-25①
A
—
—
-100
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
-0.77
-1
V
IS=-1A, VGS=0V
trr
Reverse Recovery Time
—
23
—
nS
TJ = 25°C, IF =-20A, di/dt =
Qrr
Reverse Recovery Charge
—
14
—
nC
100A/μs
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Page 2 of 8
Rev.1.0
SSF4607D
30V P-Channel MOSFET
Test Circuits and Waveforms
EAS test circuit:
Switching time test circuit:
Gate charge test circuit:
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 8
Rev.1.0
SSF4607D
30V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 3. Normalized On-Resistance Vs. Case
Figure 4: Power Dissipation Vs. Case Temperature
Temperature
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Page 4 of 8
Rev.1.0
SSF4607D
30V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs Case Temperature
Figure 6. Gate-Charge Characteristics
Figure 7. Typical Capacitance Vs. Drain-to-Source
Voltage
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Page 5 of 8
Rev.1.0
SSF4607D
30V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure8.Normalized Maximum Transient Thermal Impedance
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Page 6 of 8
Rev.1.0
SSF4607D
30V P-Channel MOSFET
Mechanical Data
TO-252 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
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Dimension In Millimeters
Min
Nom
Max
2.200
2.300
2.380
0.910
1.010
1.110
0.710
0.760
0.810
5.130
5.330
5.460
0.460
0.510
0.560
6.000
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
0
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
0
8 (REF)
8 (REF)
Page 7 of 8
Rev.1.0
SSF4607D
30V P-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF4607D
Package (Available)
TO-252(DPAK)
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Units/Tape
Type
Tapes/Inner
Units/Inner
Inner
Units/Carton
Box
Box
Boxes/Carton
Box
Box
TO-252
2500
1
2500
5
12500
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Tj=125℃ to 150℃ @ 80%
168 hours
3 lots x 77 devices
Temperature
of Max VDSS/VCES/VR
500 hours
Reverse
1000 hours
Bias(HTRB)
High
Tj=150℃@ 100% of Max
168 hours
Temperature
VGSS
500 hours
Gate
3 lots x 77 devices
1000 hours
Bias(HTGB)
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Page 8 of 8
Rev.1.0