SSF8421 20V Complementary MOSFET GENERAL FEATURES ●N-Channel V DS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V Schematic Diagram ●P-Channel V DS = -20V,ID = -3.5A RDS(ON) < 85mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V Marking and Pin Assignment ●High Power and current handing capability ●Lead free product ●Surface Mount Package TSSOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 8421 SSF8421 TSSOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V ID 4.5 -3.5 A IDM 30 -30 A PD 1.0 1.0 W TJ,TSTG -55 To 150 -55 To 150 ℃ N-Ch 83 P-Ch 100 Drain Current-Continuous@Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS www.goodark.com Page 1 of 4 Rev.1.0 SSF8421 20V Complementary MOSFET Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA N-Ch 20 VGS=0V ID=-250μA P-Ch -20 VDS=20V,VGS=0V N-Ch 1 VDS=-20V,V GS=0V P-Ch -1 N-Ch ±100 P-Ch ±100 VGS=±12V,VDS=0V V μA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) RDS(ON) gFS VDS=V GS,ID=250μA N-Ch 0.6 VDS=VGS,ID=-250μA P-Ch -0.6 VGS=4.5V, ID=4.5A N-Ch 23 30 VGS=-4.5V, ID=-3.5A P-Ch 40 50 VGS=2.5V, ID=3.9A N-Ch 30 40 VGS=-2.5V, ID=-2.7A P-Ch 60 85 V DS=10V,ID=4.5A N-Ch 20 VDS=-10V,ID=-3.5A P-Ch 10 N-Ch 22 50 P-Ch 27 50 N-Ch 40 80 P-Ch 30 60 N-Ch 50 100 P-Ch 55 100 N-Ch 20 40 P-Ch 21 40 N-Ch 10 20 P-Ch 14 25 N-Ch 2.5 P-Ch 3.5 N-Ch 3.0 P-Ch 3.5 V mΩ S SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge www.goodark.com td(on) tr td(off) nS N-Ch VDD=10 V,ID=1A VGEN=10V,RGEN=6Ω P-Ch V DD=-10V,ID=-1A V GEN=-10V,RGEN=6Ω tf Qg nS nS N-Ch VDS=15V,ID=4.5A,VGS=4.5V nC nC Qgs Qgd nS P-Ch VDS=-15V,ID=-4.5A,VGS=-3.5V Page 2 of 4 nC Rev.1.0 SSF8421 20V Complementary MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD V GS=0V,IS=1.25A N-Ch 1.2 V VGS=0V,IS=-1.25A P-Ch -1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. r(t),Normalized Effective Transient Thermal Impedance N-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance P-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF8421 20V Complementary MOSFET TSSOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0