SSF3365

SSF3365
30V P-Channel MOSFET
D
DESCRIPTION
The SSF3365 uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
GENERAL FEATURES
Schematic Diagram
● V DS = -30V,ID = -3A
R DS(ON) < 140mΩ @ V GS=-4.5V
R DS(ON) < 80mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
3365
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3365
SSF3365
SOT-23
Tape Width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
-30
V
Gate-Source Voltage
V GS
±20
V
ID（25℃）
-3
A
ID（70℃）
-2.5
A
IDM
-12
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
R θJA
100
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
V DS=-24V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
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Page 1 of 4
-30
V
Rev.1.0
SSF3365
30V P-Channel MOSFET
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
VDS=VGS,ID=-250μA
g FS
-1
V
VGS=-10V, ID=-3A
64
80
VGS=-4.5V, ID=-2.5A
100
140
VDS=-10V,ID=-3A
mΩ
3
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C lss
V DS=-15V,VGS=0V,
F=1.0MHz
600
PF
150
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
C rss
95
PF
Turn-on Delay Time
td(on)
10
nS
Turn-on Rise Time
tr
9
nS
25
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-15V,ID=-1A
VGS=-10V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
8
nS
Total Gate Charge
Qg
10
nC
Gate-Source Charge
Q gs
2
nC
Gate-Drain Charge
Q gd
2
nC
V DS=-15V,ID=-3A,VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V SD
VGS=0V,IS=-1.25A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF3365
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ZthJA Normalized Transient
Thermal Resistance
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF3365
30V P-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0