SSF2305

SSF2305
20V P-Channel MOSFET
D
DESCRIPTION
The SSF2305 uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 0.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
GENERAL FEATURES
Schematic Diagram
● V DS = -20V,ID = -3A
R DS(ON) < 114mΩ @ VGS=-2.5V
R DS(ON) < 89mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOT23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2305
SSF2305
SOT23
-
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Tape Width
Quantity
-
-
Limit
Unit
Drain-Source Voltage
V DS
-20
V
Gate-Source Voltage
V GS
±12
V
ID(25℃)
-3
A
ID(70℃)
-1.8
A
IDM
-10
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
R θJA
100
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
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Page 1 of 6
Rev.1.0
SSF2305
20V P-Channel MOSFET
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
VGS=0V ID=-250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
V DS=-20V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
V
Drain-Source On-State Resistance
RDS(ON)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
-0.5
VGS=-4.5V, ID=-3A
62
89
VGS=-2.5V, ID=-2A
88
114
VDS=-5V,ID=-3A
7
S
1160
PF
210
PF
PF
g FS
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C lss
V DS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
C rss
125
Turn-on Delay Time
td(on)
13.6
27.2
nS
Turn-on Rise Time
tr
8.6
17.2
nS
73.6
147.2
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-3A
VGS=-4.5V,RGEN=3Ω
td(off)
Turn-Off Fall Time
tf
34.6
69.2
nS
Total Gate Charge
Qg
9.6
12.7
nC
Gate-Source Charge
Q gs
Gate-Drain Charge
Q gd
V DS=-10V,ID=-3A,VGS=-4.5V
1.1
nC
2.6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V SD
VGS=0V,IS=-1A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 6
Rev.1.0
SSF2305
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A）
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
-ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
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Figure 6 Drain-Source On-Resistance
Page 3 of 6
Rev.1.0
SSF2305
-ID- Drain Current (A)
Normalized On-Resistance
20V P-Channel MOSFET
-Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
-Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
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-Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Page 4 of 6
Rev.1.0
SSF2305
-ID- Drain Current (A)
20V P-Channel MOSFET
Vds Drain-Source Voltage (V)
Safe Operation Area
R(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 6
Rev.1.0
SSF2305
20V P-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 6
Rev.1.0