AOC3860 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications VSS 12V RSS(ON) (at VGS=4.5V) < 2.7mΩ RSS(ON) (at VGS=4.0V) < 2.8mΩ RSS(ON) (at VGS=3.8V) < 2.85mΩ RSS(ON) (at VGS=3.1V) < 3.3mΩ RSS(ON) (at VGS=2.5V) < 4.2mΩ Typical ESD protection HBM Class 2 • Battery protection switch • Mobile device battery charging and discharging AlphaDFN 3.05x1.77_6 Top View D2 D1 Bottom View Bottom View Top View 3 1 Pin1 S1 G1 S1 S2 G2 S2 G2 G1 Pin1 4 6 S2 S1 Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AOC3860 AlphaDFN 3.05x1.77_6 Tape & Reel 8000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Source-Source Voltage Symbol VSS Gate-Source Voltage Source Current(DC) Note1 Power Dissipation V VGS ±8 IS 30 100 TA=25°C ISM PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient RθJA Steady-State Maximum Junction-to-Ambient Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board. Note 2. PW <10 µs pulses, duty cycle 1% max. Rev.1.0: May 2016 Units V TA=25°C Source Current(Pulse) Note2 Note1 Rating 12 www.aosmd.com A 2.5 W -55 to 150 °C Typical 40 50 Units °C/W °C/W Page 1 of 5 AOC3860 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVSSS Source-Source Breakdown Voltage Conditions Min Typ Max IS=250µA, VGS=0V Test Circuit 6 VSS=12V, VGS=0V Test Circuit 1 1 5 Units 12 V ISSS Zero Gate Voltage Source Current IGSS VGS(th) Gate leakage current VSS=0V, VGS=±8V TJ=55°C Test Circuit 2 ±10 µA Gate Threshold Voltage VSS=VGS, IS=250µA Test Circuit 3 0.3 0.55 0.9 V VGS=4.5V, IS=5A Test Circuit 4 1.5 2.15 2.7 2.0 2.95 3.7 VGS=4.0V, IS=5A TJ=125°C Test Circuit 4 1.55 2.2 2.8 mΩ VGS=3.8V, IS=5A Test Circuit 4 1.6 2.25 2.85 mΩ VGS=3.1V, IS=5A Test Circuit 4 1.7 2.45 3.3 mΩ VGS=2.5V, IS=5A Test Circuit 4 1.9 2.8 4.2 mΩ 1 V RSS(ON) Static Source to Source On-Resistance gFS Forward Transconductance VSS=5V, IS=5A Test Circuit 3 70 VFSS Forward Source to Source Voltage IS=1A,VGS=0V Test Circuit 5 0.52 µA mΩ S DYNAMIC PARAMETERS Rg Gate resistance f=1MHz 1.2 KΩ SWITCHING PARAMETERS Qg Total Gate Charge VG1S1=4.5V, VSS=6V, IS=5A 44 nC 2 µs tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VG1S1=4.5V, VSS=6V, RL=1.2Ω, RGEN=3Ω Test Circuit8 4.5 µs 6 µs 11 µs APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2016 www.aosmd.com Page 2 of 5 AOC3860 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10 1.5V 8 VDS=5V 8 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 6 IS(A) IS (A) 6 4 125°C 4 25°C 2 2 VGS=1.0V 0 0 0 1 2 3 4 0 5 0.5 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VSS (Volts) Figure 1: On-Region Characteristics 5 Normalized On-Resistance 1.6 4 VGS=3.1V VGS=2.5V RSS(ON) (mΩ) 1 3 2 VGS=4.0V VGS=4.5V VGS=3.8V 1 VGS=4.5V IS=5A 1.4 VGS=4.0V IS=5A VGS=3.8V IS=5A 1.2 VGS=3.1V IS=5A 1 VGS=2.5V IS=5A 0.8 0 0 2 4 6 8 0 10 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature IS (A) Figure 3: On-Resistance vs. Source Current and Gate Voltage 8 1.0E+01 IS=5A 1.0E+00 1.0E-01 4 IS (A) RSS(ON) (mΩ) 6 125°C 125°C 1.0E-02 25°C 1.0E-03 2 1.0E-04 25°C 0 1.0E-05 0 1 2 3 4 5 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.1.0: May 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VFSS (Volts) Figure 6: Forward Source to Source Characteristics Page 3 of 5 AOC3860 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VSS=6V IS=5A VGS (Volts) 4 3 2 1 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 1000.0 10µs 10µs 100.0 RSS(ON) limited 100 100µs Power (W) IS (Amps) TJ(Max)=150°C TA=25°C 10.0 1ms 10ms 1.0 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 10 1 DC 0.1 1 VSS (Volts) 10 0.1 1E-050.00010.001 0.01 100 ZθJA Normalized Transient Thermal Resistance 1 10 100 1000 Pulse Width (s) Figure 9: Single Pulse Power Rating Junction-toAmbient (Note1) VGS> or equal to 2.5V Figure 8: Maximum Forward Biased Safe Operating Area (Note1) 10 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Normalized Maximum Transient Thermal Impedance (Note1) Rev.1.0: May 2016 www.aosmd.com Page 4 of 5 AOC3860 TEST CIRCUIT 1 Isss TEST CIRCUIT 2 Igss1,2 POSITIVE VSS FOR ISSS+ POSITIVE VGS FOR IGSS1+ S2 NEGATIVE VSS FOR ISSS- S2 NEGATIVE VGS FOR IGSS1When FET1 is measured between GATE and SOURCE G2 A G2 of FET2 are shorted D2 D2 D1 D1 VSS G1 G1 A VG S1 TEST CIRCUIT 3 Vgs(off) S1 TEST CIRCUIT 4 Rss(on) S2 S2 When FET1 is measured Vss/Is between GATE and SOURCE of FET2 are shorted G2 G2 A Is D2 D2 D1 D1 VSS G1 G1 V VSS VGS VGS S1 TEST CIRCUIT 5 VF(SS)1,2 S1 TEST CIRCUIT 6 BVDSS POSITIVE VSS FOR ISSS+ NEGATIVE VSS FOR ISSS- S2 S2 4.5V When FET1 measured G2 G2 IF FET2 VGS=4.5V Is D2 D2 D1 D1 G1 G1 V V VSS VGS=0 S1 S1 TEST CIRCUIT 8 Switching time TEST CIRCUIT 7 BVGSO1,2 POSITIVE VSS FOR ISSS+ NEGATIVE VSS FOR ISSS- S2 Vout S2 When FET1 is measured between GATE and SOURCE G2 of FET2 are shorted G2 D2 D2 D1 D1 Vin G1 G1 V IG Rev.1.0: May 2016 S1 S1 www.aosmd.com Page 5 of 5