20131107013417 1225

WCD4C60S
on Con
S ilic
ilico
onttr olled Rec
Recttifie
ierr s
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 4 A )
◆ Low On-State Voltage (1.6V(Typ.) @ I TM )
General Description
Sensitive gate triggering SCR is suitable for the appli cation where
requiring high bidirectional blocking voltage capabili ty and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current lim it circuit and heating control system.
ngs (T = 25°C unless otherwise specified)
A bsolute Max
axii mum Rati
tin
J
Parameter
Symbol
VDRM
Condition
Repetitive Peak Off-State Voltage
I T (AV)
I T (RM S)
I TSM
Ratings
600
Average On-State Current(180°
T i =60 °C
1.35
Conduction Angle)
Tamb=25 °C
0.9
R.M.S On-State Current(180°
T i =60 °C
Conduction Angle)
Tamb=25 °C
Units
V
A
1/2 Cycle, 60Hz, Sine Wave
Surge On-State Current
4
1.35
A
33
A
Non-Repetitive
I 2t
I2t for Fusing
t =10ms
4.5
A2s
di/dt
Critical rate of rise of on-state current
F=60Hz,Tj=125 °C
50
A/㎲
P GM
Forward Peak Gate Power Dissipation
0.5
W
0.2
W
1.2A
A
Forward Average Gate Power
P G(AV)
Tj=125 °C
Dissipation
I FGM
Forward Peak Gate Current
TJ
Operating Junction Temperature
-40~125 °C
°C
T STG
Storage Temperature
-40~150 °C
°C
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case(DC)
15
℃/W
RθJA
Thermal Resistance Junction to Ambient(DC)
100
℃/W
Jan 2009 .Rev .0
Copyr [email protected] Microelectronics Co., Ltd., All right reserved.
WCD4C60S
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
TestConditions
IDRM
Repetitive Peak Off-State Current
VTM
Peak On-State Voltage (1)
I GT
Gate Trigger Current (2)
VAK=VDRM RGK=1KΩ
ITM=8A, tp=380㎲
VD=12V,RL=140
Valu e
Units
Min
Typ
Max
-
-
5
μA
-
-
1
mA
-
-
1.8
V
-
-
200
μA
-
-
0.8
V
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
VD=12V,RL=3.3KΩ, RGK=1 KΩ
0.1
dv/dt
Critical Rate of Rise Off-State Voltage
VD=67%VDRM, RGK=1 KΩ
15
-
-
V/㎲
IH
Holding Current
IT=50mA, RGK=1 KΩ
-
-
5
mA
IL
Latching Current
IT=1mA, RGK=1 KΩ
6
-
-
mA
Rd
Dynamic resistance
Tj=125°C
-
-
100
mΩ
V
e:
N ot
ote:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement
2/5
Steady, keep you advance
WCD4C60S
e ra tu
Fig . 1 IT (A V)(DC) vs lead Temp
mpe
turre
era tu
Fig. 3 IGT,IH,IL Te mp
mpe
turre C hara ct er is
isttics
F ig. 2
F ig. 4
Fig.5 dv /dt VS R GK
PD(
A V) V S IT(AV)
D(A
er oo
es
ITSM VS N umb
umber
ooff cycl
cycle
dt VS C GK
Fig.6 d v/
v/d
3/5
Steady, keep you advance
WCD4C60S
st at e C ha rac te ris
Fig.7 OnOn-s
istt ics
F ig.8 R θJA VS Pulse du
durra tion
4/5
Steady, keep you advance
WCD4C60S
age Dim
ension
TO252 Pack
cka
Dime
Unit: mm
5/5
Steady, keep you advance