WINSEMI MCK100-8

MCK100-8
nsitive Gate
Se
Sen
on Con
tr
olled Rect
Silic
Silico
ontr
tro
Rectiifiers
Features
■ Sensitive gate trigger current: IGT=200uA maximum
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM/[email protected]=125℃
■ Low holding current: IH=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits, small motor control, gate driver for large SCR, sensing
and detecting circuits.
General purpose switching and phase control applications
Absolute Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
Parameter
VDRM/VRRM
IT(RMS)
Value
Units
600
V
TI=85℃
0.8
A
TI=85℃
0.5
A
Repetitive peak off-state voltage
RMS on-state current
(180o
conduction angles)
(80o
IT(AV)
Average on-state current
conduction angles )
ITSM
Non repetitive surge peak on-state current
I2t
I²t Value for fusing
PGM
Peak gate power
Note(1)
tp = 8.3 ms
9
tp = 10 ms
8
tp = 8.3 ms
0.41
A2s
2
W
TJ=125℃
50
A/μs
A
Critical rate of rise of on-state current
dI/dt
ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs
PG(AV)
Average gate power dissipation
TJ=125℃
0.1
W
IFGM
Peak gate current
TJ=125℃
1
A
VRGM
Peak gate voltage
TJ=125℃
5
V
TJ,
Junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal resistance, Junction-to-Case
-
-
60
℃/W
RQJA
Thermal resistance, Junction-to-Ambient
-
-
150
℃/W
Rev. A Jun.2011
[email protected] Microelectronics Co., Ltd., All right reserved.
MCK100-8
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Characteristics
Symbol
IDRM/IRRM
VTM
IGT
off-state leakage current
Tc=25℃
(VAK= V DRM/V RRM)
Tc=125℃
Forward “On” voltage (ITM = 1A tp = 380μs)
(Note2.1)
Gate trigger current (continuous dc)
(Note2.2)
(VAK = 7 Vdc, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc)
VGT
VGD
Typ.
Max
-
-
1
Unit
μA
100
-
1.2
1.7
V
15
-
200
μA
-
-
0.8
V
0.2
-
-
V
500
800
-
(Note2.2)
(VAK = 7 Vdc, RL = 100 Ω)
Gate threshold Voltage
Min
(Note2.1)
Voltage Rate of Rise Off-State Voltage
TJ=125℃
(VD=0.67VDRM ;exponential waveform)
Gate open circuit
dv/dt
V/μs
25
IH
Holding Current (VD = 12 V; IGT = 0.5 mA)
-
2
5
mA
IL
latching current (VD = 12 V; IGT = 0.5 mA)
-
2
6
mA
Rd
Dynamic resistance
-
-
245
mΩ
TJ=125℃
Note 2.1 Pulse width≤1.0ms,duty cycle≤1%
2.2 RGK current is not included in measurement.
2 /5
Steady, keep you advance
MCK100-8
3 /5
Steady, keep you advance
MCK100-8
4 /5
Steady, keep you advance
MCK100-8
SOT-89 Package Dimension
5 /5
Steady, keep you advance