api-nucleareventdetector.pdf

Low Power Nuclear Event Detector (NED)
High Reliability Electronic Modules for Extreme Environments
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Radiation hard to tactical/strategic nuclear environments
Low power consumption at 2mA from single 5V supply
Operates within specification over -55°C to +125°C
Precise radiation detection level with single external resistor
Accurate monostable pulse duration with single external capacitor
100% Detection tested
Built-in self test
Resettable output, bistable flag
Industry Standard Packages
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14 pin DIL package version qualified to MIL-PRF-38534 Class H
14 pin surface mount version (available if required, Class H qualification pending)
API Technologies, in association with MBDA, introduces 15313A-DESC, a low power Nuclear Event
Detector (NED) equipped with the latest materials and technology to mitigate the effect of nuclear
weapon outputs. This cutting-edge product detects the event and sets a system flag which can either
remove power from the electronics to be protected or drive the system into a known and controllable
state. It is readily integrated into systems to support nuclear hardening.
Addressing the problem of nuclear event detection
Designing circuits to operate through an event requires specialist expertise. Ideally, electronic system
hardware is designed to be ‘rad-hard’ to the necessary level. This requires the use of exotic semiconductor processing and technologies such as Silicon-On-Sapphire (SOS) or Silicon-On-Insulator (SOI).
Many electronic functions are not realised in these technologies and devices currently available usually
carry a major cost penalty. The Nuclear Event Detector is a highly effective, low cost solution for protecting system electronics
exposed to a nuclear event by detecting and enabling power-down and allowing the system to be
re-powered once the event has passed.
System shutdown or power supply isolation can be implemented in response to the NED in a manner
that avoids potentially permanent and catastrophic failures for example during crowbar protection. The
system can then implement power-up in an appropriately controlled manner.
Low Power NED
Inputs and Outputs
The NED has provision for setting a nominal trigger threshold between 1E3 and 1E6 Gy(Si)/s [1E5 and 1E8 rad(Si)/s]
using a single external resistor. The detection output pulse width can be set between 10µs and >1s (nominal) with
a single external capacitor.
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Nuclear Event Flag (NEF) output - can be reset by either of two complementary inputs
Nuclear Event Detection (NED) output
Built-in test (BIT)
AC Characteristics - Inputs
Parameter
Description
Condition
Min.
TEST
Pulse Width¶
Vtest=0 to 4V
250
FR
Max.
Units
ns
NED delay¶
5
10
μs
NEF delay
5
10
μs
Pulse width
Vfr=0 to 4V
250
NED delay
NFR
Typ.
Pulse width
ns
0.2
Vnfr=5 to 0.7V
1
500
NED delay
μs
ns
0.25
1
μs
Typ.
Max.
Units
25
50
ns
50
200
ns
20
30
μs/nF
AC Characteristics - Outputs
Parameter
Description
Condition
NED
Delay
NEF
Delay
Pull
up=220ohms
Pull
up=220ohms
Vh=4.5 to 5.5V
Pulse width
Min.
10
Notes : § Electrical characteristic specifications valid over full environmental ranges
† Maximum charge during irradiation = 50nC
‡ Maximum charge into Rth input = 2nC excluding current into threshold set resistor
¶ NED active when TEST input active - pulse duration timed from negative edge of
TEST input
Outputs inactive during power up provided Vh rises at less than 5000 V/s (5 V/ms
Absolute Maximum Ratings
Parameter
Limit
Voltage at pins 6 11 12 and 14 w.r.t. pin 7
7.0V
Voltage at pins 1 and 8 w.r.t. pin 7
20.0V
Storage temperature range
-65°C < Ta < +150°C
Electrical Characteristics
Maximum environmental operating conditions
Parameter
Limit
Operating temperature range
-55°C < Ta < +125°C
Ionising radiation dose rate
>1E8 Gy(Si)/s (>1E10 rad(Si)/s)
Ionising total dose
>100 Gy(Si) (>1E4 rad (Si))
Neutron fluence
>1E13 n/cm²
DC Characteristics - Power
Parameter
Symbol
VH
VH
IH
VL
VB
IB
Min.
Typ.
Max.
Units
4.5
5.0
5.5
V
2.0
mA
6.0
mA
15.0
mA
100
mA
20.0
V
100
μA
5.5
V
2.0
μA
100
mA
Max.
Units
0.7
V
1.0
mA
Standby
VH=5.5V
Flag set
VH=5.5V
Operational
VH=5.5V
During
irradiation
VH=5.5V †
VL
IL
VB
Condition
4.5
VL=20.0V
Standby / flag
set
Standby / flag
set
During
irradiation
VB=5V ‡
4.5
15.0
5.0
DC Characteristics - Inputs
Parameter
Symbol
FR
Vil
Iil
Condition
Vi=0.7V
Vih
Iih
0.5
Vi=3.0V
0.7
V
2.3
3.0
mA
2.1
3.0
V
0.7
V
-3.0
mA
Vil
Iil
Vi=0.7V
Vih
Iih
-1.0
4.0
Vi=4.0V
Vsw
TEST
Typ.
3.0
Vsw
NFR
Min.
0.8
V
-0.1
-1.0
mA
0.7
2.0
V
0.7
V
1.0
mA
Vil
Iil
Vi=0.7V
Vih
Iih
0.5
4.0
Vi=4.0V
Vsw
V
3.3
4.0
mA
0.7
2.1
3.0
V
Min.
Typ.
Max.
Units
DC Characteristics - Outputs
Parameter
Symbol
NED
Voh
Vol
NEF
Voh
Vol
Condition
VL=20V Io=100μA
Iol=10mA
Iol=20mA
VL=20V Io=100μA
Iol=10mA
Iol=20mA
18.5
V
0.6
V
0.7
V
18.5
V
0.6
V
0.7
V
Low Power NED
Outline Drawings and Pin Out
Package Option
Qualified to MIL-PRF-38534 Class H
(Surface mount version available if required, qualification
pending)
DIMENSIONS in
DIMENSIONS mm
MIN
MAX
MIN
MAX
A
-
0.145
-
3.68
b
0.16
0.022
0.41
0.56
D
0.490
0.500
12.45
12.70
Symbol
1. 2. e
0.100 BSC
2.54 BSC
e1
0.600 BSC
15.24 BSC
e2
0.295
0.305
7.49
7.75
E
0.790
0.800
20.06
20.32
L
0.195
0.215
4.95
5.46
S
0.095
0.105
2.41
2.68
Soldering leads, temperature of leads must not exceed 270ºC for a time
of 10 seconds.
Package must not be ultrasonically cleaned without prior consultation
with RF2M Microelectronics Ltd.
Ordering Information
15313A-DESC (SnPb solder)
15313-DESC (Gold)
This product may be subject to export control regulations
Pin
Designation
Description / function
1
VL
2
NED
Nuclear Event Detection output - provides an active low output
for the period set by the external timing capacitor.
3
n/c
No connection
4
CB
External timing capacitor (low) - connection for external timing capacitor.
If an electrolytic capacitor is used, this pin should be connected to the -ve side.
5
CA
External timing capacitor (high) - connection for external timing capacitor.
If an electrolytic capacitor is used, this pin should be connected to the +ve side.
6
TEST
Built in test input - provides means for electrical stimulation of the NED.
7
GND
Ground and case
8
VB
PIN diode bias supply - provides a separate supply to the radiation detector.
9
Rth
External threshold set resistor - connection for the external radiation threshold
set resistor. The other end of the resistor should be connected to ground (Pin 13).
The resistor should be as close as possible to the NED.
10
n/c
No connection
11
NFR
Flag reset (active low) - provides an active low reset input to the NEF bistable.
12
FR
13
NEF
Nuclear Event Flag output - provides an active low bistable output.
The bistable output is set when the NED triggers.
14
VH
Device supply - provides supply to the internal NED electronics.
Output load supply - provides a supply to the NED and NEF outputs via
internal 10 kohm resistors. External pull up resistors may also be used.
Flag reset (active high) - provides an active high reset input to the NEF bistable.
Whilst every effort is made to ensure the accuracy of the information contained in this document, no responsibility can be accepted for any errors and/or omissions.
Descriptions and specifications of products are subject to change without notice.
T: +44 (0) 1493 743100
E: info.r[email protected]
W: micro.apitech.co.uk
T: +1 855.294.3800
W: www.apitech.com