SW12N65A1

SW12N65A1
N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET
Features






TO-220F
TO-220
BVDSS : 650V
TO-263
: 12A
ID
High ruggedness
Low RDS(ON) (Typ0.7Ω)@VGS=10V
Low Gate Charge (Typ43 nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,PC Power
RDS(ON) : 0.7Ω
1
2
1
3
1
2
3
2
2
3
1. Gate 2. Drain 3. Source
1
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
2
3
SW P 12N65A1
SW F 12N65A1
SW B 12N65A1
SW12N65A1
SW12N65A1
SW12N65A1
TO-220
TO-220F
TO-263
TUBE
TUBE
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220 TO-220F TO-263
Drain to source voltage
Unit
650
V
Continuous drain current (@TC
=25oC)
12.0*
A
Continuous drain current (@TC
=100oC)
7.6*
A
48
A
±30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
368
mJ
EAR
Repetitive avalanche energy
(note 1)
90
mJ
Peak diode recovery dv/dt
(note 3)
4.0
V/ns
dv/dt
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
Derating factor above
25oC
215
58
208
W
1.72
0.46
1.66
W/oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
-55 ~ + 150
oC
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc
Thermal resistance, Junction to case
Rthja
Thermal resistance, Junction to ambient
Value
Unit
TO-220 TO-220F TO-263
0.58
2.17
55
44
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
0.6
oC/W
oC/W
Oct. 2015. Rev. 4.0
1/6
SW12N65A1
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
IGSS
650
V
VDS=650V, VGS=0V
VDS=520V, TC
V/oC
0.70
=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.0
V
0.8
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 6A
0.7
Forward transconductance
VDS = 20 V, ID = 6 A
9.5
Gfs
2.0
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
35
td(on)
Turn on delay time
20
tr
td(off)
tf
Qg
Rising time
Turn off delay time
2100
VGS=0V, VDS=25V, f=1MHz
170
VDS=325V, ID=12A, VGS=10V,
RG=25Ω
(note 4,5)
pF
36
ns
134
Fall time
49
43
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=520V, VGS=10V, ID=12A
(note 4,5)
nC
10
20
Source to drain diode ratings characteristicsa
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=12A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=12A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
12
A
48
A
1.4
V
428
ns
6.6
uC
Oct. 2015. Rev. 4.0
2/6
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 5.1mH, IAS = 12.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 12.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW12N65A1
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
3/6
SW12N65A1
Fig. 7. Maximum safe operating area (TO-220)
Fig. 8. Maximum safe operating area (TO-220F)
Fig. 9. Maximum safe operating area (TO-263)
Fig. 10. Transient thermal response curve(TO-220)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
4/6
SW12N65A1
Fig. 7. Maximum safe operating area（TO-220F）
Fig. 8. Transient thermal response curve （TO-263）
Fig. 9. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGS
QGD
DUT
VGS
3mA
Charge(nC)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
5/6
SW12N65A1
Fig. 10. Switching time test circuit & waveform
VDS
RL
90%
VDS
VDD
10VIN
DUT
10%
10%
VIN
RGS
td(on)
tf
td(off)
tr
tON
tOFF
Fig. 11. Unclamped Inductive switching test circuit & waveform
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
6/6