SW19N10 N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 BVDSS :100V TO-252 : 19A ID High ruggedness Low RDS(ON) (Typ 0.1Ω)@VGS=10V Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, Li Battery Protect Board, Inverter RDS(ON) : 0.1Ω 1 2 2 1 2 3 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW P 19N10 SW19N10 TO-220 TUBE 2 SW D 19N10 SW19N10 TO-252 REEL Absolute maximum ratings Symbol VDSS ID Value Parameter TO-220 TO-252 Unit Drain to source voltage 100 V Continuous drain current (@TC=25oC) 19* A Continuous drain current (@TC=100oC) 11* A 68 A ±25 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 260 mJ EAR Repetitive avalanche energy (note 1) 17 mJ Peak diode recovery dv/dt (note 3) 15 V/ns dv/dt PD TSTG, TJ TL (note 1) Total power dissipation (@TC=25oC) 208 118 W Derating factor above 25oC 1.66 0.94 W/oC Operating junction temperature & storage temperature -55 ~ + 150 oC 300 oC Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Value Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient TO-220 0.6 Unit TO-252 1.06 oC/W 62.5 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. oC/W Oct. 2015. Rev. 4.0 1/5 SW19N10 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current BVDSS 100 V V/oC 0.093 VDS=100V, VGS=0V 1 uA VDS=80V, TC=125oC 100 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 4.0 V 0.12 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=9.5A 0.1 Forward transconductance VDS=40V, ID=9.5A 3.2 Gfs 2.0 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Qg Rising time Turn off delay time 600 VGS=0V, VDS=25V, f=1MHz 165 pF 32 10 VDS=50V, ID=19A, VGS=10V, RG=25Ω (note 4,5) 40 ns 28 Fall time 15 15 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=80V, VGS=10V, ID=19A (note 4,5) 4 nC 6.5 Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit 19 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 62.4 A Diode forward voltage drop. IS=19A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=19A, VGS=0V, dIF/dt=100A/us IS Continuous source current ISM VSD 52 ns 128 nC Oct. 2015. Rev. 4.0 2/5 ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 1.4mH, IAS = 19A, VDD = 25V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 19A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. SW19N10 Fig. 2. Gate charge characteristics Fig. 1. On-state characteristics Notes: 1. 250μs Pulse Test 2. T=25 ℃ 3. VGS 2~10V Step=1V Fig 4. Breakdown Voltage Variation vs. Junction Temperature Fig. 3. On state current vs. diode forward voltage BVDSS, (Normalized Drain-Source Breakdown Voltage 1.2 1.1 1 0.9 0.8 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） Fig. 5. On resistance variation vs. junction temperature Fig. 6. Maximum safe operating area RDSON, (Normalized Drain-Source ON resistance 2.5 2 1.5 1 0.5 0 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 3/5 SW19N10 Fig. 7. Transient thermal response curve Fig. 8. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGD QGS DUT VGS 1mA Charge(nC) Fig. 9. Switching time test circuit & waveform VDS RL RGS VDS VDD VIN 10VIN 90% DUT 10% 10% td(on) tr tON Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. td(off) tf tOFF Oct. 2015. Rev. 4.0 4/5 SW19N10 Fig. 10. Unclamped Inductive switching test circuit & waveform Fig. 11. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to [email protected] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 5/5