SW50N06U

SW50N06U
N-channel Enhanced mode TO-251/TO-252 MOSFET
Features






TO-252
TO-251
High ruggedness
Low RDS(ON) (Typ 16mΩ)@VGS=10V
Low Gate Charge (Typ 33nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Electronic Ballast,Motor Control,
Synchronous Rectification, Inverter
BVDSS : 60V
: 50A
ID
RDS(ON) : 16mΩ
1
2
1
3
2
2
3
1. Gate 2. Drain 3. Source
1
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW I 50N06U
SW50N06U
TO-251
TUBE
2
SW D 50N06U
SW50N06U
TO-252
REEL
Absolute maximum ratings
Symbol
VDSS
ID
Parameter
Value
Unit
Drain to source voltage
60
V
Continuous drain current (@TC=25oC)
50*
A
Continuous drain current (@TC=100oC)
36*
A
200
A
±20
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
653
mJ
EAR
Repetitive avalanche energy
(note 1)
31
mJ
Peak diode recovery dv/dt
(note 3)
4.5
V/ns
Total power dissipation (@TC=25oC)
195.3
W
Derating factor above 25oC
1.43
W/oC
-55 ~ + 150
oC
300
oC
Value
Unit
0.64
oC/W
70
oC/W
dv/dt
PD
TSTG, TJ
TL
(note 1)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc
Thermal resistance, Junction to case
Rthja
Thermal resistance, Junction to ambient
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Oct. 2015. Rev. 3.0
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SW50N06U
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
60
V
V/oC
0.06
VDS=60V, VGS=0V
1
uA
VDS=48V, TC=125oC
100
uA
Gate to source leakage current, forward
VGS=20V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-20V, VDS=0V
-100
nA
4.0
V
23
mΩ
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 25A
16
Forward transconductance
VDS = 40V, ID= 25A
20
Gfs
2.0
S
Dynamic characteristics
900
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
80
td(on)
Turn on delay time
19
tr
td(off)
tf
Qg
Rising time
Turn off delay time
VGS=0V, VDS=25V, f=1MHz
430
VDS=30V, ID=50A, VGS=10V,
RG=25Ω
(note 4,5)
pF
96
ns
43
Fall time
42
33
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=48V, VGS=10V, ID=50A
(note 4,5)
8
nC
15
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
50
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
200
A
Diode forward voltage drop.
IS=50A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=50A, VGS=0V,
dIF/dt=100A/us
IS
Continuous source current
ISM
VSD
47
ns
0.11
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 522uH, IAS = 50.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 50.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
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SW50N06U
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 1. On-state characteristics
VGS=10V
Notes:
1. 250μs Pulse Test
2. T=25 ℃
3. VGS 2~10V Step=1V
VGS=20V
Fig. 4. On state current vs. diode
forward voltage
Fig. 3. Gate charge characteristics
VGS , Gate Source Voltage(V)
12
10
8
VDS=48V
150℃
6
25℃
4
2
0
0
5
10
15
20
25
30
35
Qg, Total Gate Charge (nC)
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
1.2
2
1.6
RDSON, (Normalized
Drain-Source ON resistance
BVDSS, (Normalized
Drain-Source Breakdown Voltage
1.8
1.1
1.4
1.2
1
1
0.8
0.6
0.9
0.4
0.2
0
0.8
-70
-45
-20
5
30
55
80
105
130
155
180
-70
-45
-20
TJ Junction Temperature （℃）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
5
30
55
80
105
130
155
180
TJ Junction Temperature （℃）
Oct. 2015. Rev. 3.0
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SW50N06U
Fig. 7. Maximum safe operating area
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGS
QGD
DUT
VGS
2mA
Charge(nC)
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SW50N06U
Fig. 10. Switching time test circuit & waveform
VDS
RL
RGS
90%
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
tf
td(off)
tr
tON
tOFF
Fig. 11. Unclamped Inductive switching test circuit & waveform
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
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Oct. 2015. Rev. 3.0
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SW50N06U
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
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