SW4N65D

SW4N65D
N-channel Enhanced mode TO-220F/TO-251N/TO-251S/
TO-251M/TO-252/SOT-82 MOSFET
Features






TO-220F TO-251N TO-251S TO-251M TO-252 SOT-82
High ruggedness
Low RDS(ON) (Typ 2Ω)@VGS=10V
Low Gate Charge (Typ 18nC)
Improved dv/dt Capability
1
1
1
1
2
2
2
100% Avalanche Tested
12
2
3
3
3
12
3
3
Application: Charger,TV-POWER
3
BVDSS : 650V
ID
RDS(ON) : 2Ω
2
1
1. Gate 2. Drain 3. Source
General Description
: 4A
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW F 4N65D
SW4N65D
TO-220F
TUBE
2
SW NI 4N65D
SW4N65D
TO-251N
TUBE
3
SW SI 4N65D
SW4N65D
TO-251S
TUBE
4
SW MI 4N65D
SW4N65D
TO-251M
TUBE
5
SW D 4N65D
SW4N65D
TO-252
REEL
6
SW S 4N65D
SW4N65D
SOT-82
TUBE
Absolute maximum ratings
Value
Symbol
VDSS
ID
Parameter
TO-220F TO-251N/S/M TO-252
Drain to source voltage
Continuous drain current
Unit
650
V
4*
A
2.5*
A
16
A
Continuous drain current (@TC=25oC)
(@TC=100oC)
SOT-82
IDM
Drain current pulsed
VGS
Gate to source voltage
± 30
V
EAS
Single pulsed avalanche energy
(note 2)
184
mJ
EAR
Repetitive avalanche energy
(note 1)
15
mJ
dv/dt
Peak diode recovery dv/dt
(note 3)
5
V/ns
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
23.3
157.1
144.4
95.4
W
Derating factor above 25oC
0.19
1.26
1.15
0.76
W/oC
Operating junction temperature & storage temperature
-55 ~ + 150
oC
300
oC
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Value
Parameter
Unit
TO-220F TO-251N/S/M TO-252
Rthjc
Thermal resistance, Junction to case
5.36
0.80
Rthja
Thermal resistance, Junction to ambient
48.7
81.4
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
0.87
SOT-82
1.31
oC/W
66.4
oC/W
May. 2016. Rev. 6.0
1/7
SW4N65D
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
650
V
VDS=650V, VGS=0V
VDS=520V,
V/oC
0.48
TC=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.5
V
2.6
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=2A
2
Forward transconductance
VDS=30V, ID=2A
3.8
Gfs
2.5
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
50
td(on)
Turn on delay time
11
tr
td(off)
tf
Qg
Rising time
Turn off delay time
531
VGS=0V, VDS=25V, f=1MHz
60
VDS=325V, VGS=10V, ID=4A,
RG=25Ω
(note 4,5)
pF
26
ns
42
Fall time
27
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
18
VDS=520V, VGS=10V, ID=4A
(note 4,5)
3
nC
9
Source to drain diode ratings characteristics
Symbol
Parameter
IS
Continuous source current
ISM
VSD
Test conditions
Min.
Typ.
Max.
Unit
4
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
16
A
Diode forward voltage drop.
IS=4A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=4A, VGS=0V,
dIF/dt=100A/us
229
ns
1.6
uC
May. 2016. Rev. 6.0
2/7
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 22.8mH, IAS = 4A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW4N65D
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown voltage variation
vs. junction temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On-state current vs. diode
forward voltage
Fig. 6. On-resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 6.0
3/7
SW4N65D
Fig. 7. Maximum safe operating area（TO-220F）
Fig. 8. Maximum safe operating area
（TO-251N&TO-251S&TO-251M）
Fig. 9. Maximum safe operating area（TO-252）
Fig. 10. Maximum safe operating area（SOT-82）
Fig. 11. Capacitance Characteristics
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 6.0
4/7
SW4N65D
Fig. 12. Transient thermal response curve （TO-220F）
Fig. 13. Transient thermal response curve（TO-251N&TO-251S&TO-251M）
Fig. 14. Transient thermal response curve （TO-252）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 6.0
5/7
SW4N65D
Fig. 15. Transient thermal response curve （SOT-82）
Fig. 16. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
1mA
Charge(nC)
Fig. 17. Switching time test circuit & waveform
VDS
90%
RL
RGS
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
May. 2016. Rev. 6.0
6/7
SW4N65D
Fig. 18. Unclamped Inductive switching test circuit & waveform
Fig. 19. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
Same type
as DUT
10VGS
Diode reverse current
VDD
*. dv/dt controlled by RG
*. Is controlled by pulse period
Diode recovery dv/dt
VDS (DUT)
VDD
VF
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 6.0
7/7