SW9435

SAMWIN
SW9435
P-channel SOP-8 MOSFET
SOP-8(Top View)
BVDSS : -30V
Features
ID
: -5.3A
■ RDS(ON) (Typ 43.5 mΩ)@VGS=-10V
■ RDS(ON) (Typ 64mΩ)@VGS=-4.5V
General Description
The SW9435 is the P-Channel logic enhancement mode power field effect transistors,
using high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits, and lower power loss that are
needed in a very small outline surface mount package.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW 9435
SW9435
SOP-8
REEL
Absolute maximum ratings
Symbol
VDSS
Parameter
Drain to Source Voltage
Value
Unit
-30
V
-5.3*
A
-20
A
ID
Continuous Drain Current (@TC=25oC)
IDM
Drain current pulsed
VGS
Gate to Source Voltage
± 20
V
Total power dissipation (@TC=25oC)
1.92
W
Derating Factor above 25oC
0.015
W/oC
-55 ~ + 150
oC
(note 1)
PD
TSTG, TJ
Operating Junction Temperature & Storage Temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthja
Parameter
Thermal resistance, Junction to ambient
Value
Unit
65
oC/W
*. The data tested bysurface mounted on a 1 inch2 FR-4 board with 2OZ copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2015. Rev.1.0
1/4
SAMWIN
SW9435
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
IDSS
Drain to source breakdown voltage
VGS=0V, ID=-250uA
-30
V
Drain to source leakage current
VDS=-24V, VGS=0V
-1
uA
Gate to source leakage current, forward
VGS=-20V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=20V, VDS=0V
-100
nA
-1.7
-3
V
VGS=-10V, ID = -5.3A
43.5
50
mΩ
VGS=-4.5V, ID = -4.2A
64
90
mΩ
IGSS
On characteristics
VGS(TH)
RDS(ON)
Gate threshold voltage
VDS=VGS, ID=-250uA
-1
Drain to source on state resistance
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
100
td(on)
Turn on delay time
24
tr
td(off)
tf
Rising time
Turn off delay time
845
VGS=0V, VDS=-15V, f=1MHz
150
VDD=-15V, RL =15Ω
ID=-1A, VGEN=-10V ,RG=6Ω
39
(note 2，3)
155
ns
Fall time
143
Qg
Total gate charge
19
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=-25V, VGS=-10V, ID=-5.3A
(note 2，3)
pF
2
nC
6
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
3.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2015. Rev.1.0
2/4
SAMWIN
Fig. 1. On-state characteristics
SW9435
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. Maximum safe operating area
Fig. 5. Transient thermal response curve
Fig. 6. Capacitance Characteristics
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2015. Rev.1.0
3/4
SAMWIN
SW9435
Fig. 7. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
1mA
Charge
nC
Fig. 8. Switching time test circuit & waveform
VDS
RL
RGS
VDS
VDD
VIN
10VIN
90%
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
Apr. 2015. Rev.1.0
4/4