NTE287H (NPN) & NTE288H (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter−Base Voltage, VEBO NTE287H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE288H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 350 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 350 − − V Emitter−Base Breakdown Voltage NTE287H V(BR)EBO 6 − − V 5 − − V VCB = 250V, IE = 0 − − 50 nA VEB = 5V, IC = 0 − − 50 µA VEB = 4V, IC = 0 − − 50 µA IE = 10µA, IC = 0 NTE288H Collector Cutoff Current ICBO Emitter Cutoff Current NTE287 IEBO NTE288 Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol DC Current Gain hFE Test Conditions IC = 1mA Base−Emitter Saturation Voltage Output Capacitance VCE(sat) VBE(sat) Cob Base−Emitter On Voltage VBE(on) Current Gain Bandwidth Product fT Typ Max Unit 20 − − 30 − − IC = 30mA 30 − 200 IC = 50mA 20 − 200 IC = 100mA 15 − − IC = 10mA, IB = 1mA − − 0.3 V IC = 20mA, IB = 2mA − − 0.35 V IC = 30mA, IB = 3mA − − 0.5 V IC = 50mA, IB = 5mA − − 1 V IC = 10mA, IB = 1mA − − 0.75 V IC = 20mA, IB = 2mA − − 0.85 V IC = 30mA, IB = 3mA − − 0.9 V VCB = 20V, IE = 0, f = 1MHz − − 6 pF VCE = 10V, IC = 100mA − − 2 V IC = 10mA, VCE = 20V, f = 20MHz, Note 1 40 − 200 MHz VCE = 10V, Note 1 IC = 10mA Collector−Emitter Saturation Voltage Min The Following Parameters apply ONLY to the NTE288H Emitter−Base Capacitance CEB VEB = −0.5V, IC = 0, f = 1MHz − − 100 pF Turn On Time tON VBE(off) = 2V, VCC = 100V, IC = 50mA, IB1 = 10mA − − 200 ns Turn Off Time tOFF VCC = 100V, IC = 50mA, IB1 = IB2 = 10mA − − 3.5 ns Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .141 (3.6) .188 (4.78) Max Seating Plane .018 (0.46) Dia .569 (14.47) E BC .100 (2.54) .050 (1.27) .151 (3.86) Max .070 (1.8) Max .190 (4.83) Max .107 (2.74) Max