NTE2534 (NPN) & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 80V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 mA DC Current Gain hFE1 VCE = 2V, IC = 1A 100 – 280 hFE2 VCE = 2V, IC = 6A 30 – – fT VCE = 5V, IC = 1A – 20 – MHz IC = 6A, IB = 600mA – – 0.5 V – – 0.4 V Gain–Bandwidth Product Collector–Emitter Saturation Voltage NTE2534 NTE2535 VCE(sat) Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 90 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 – – V – 0.2 – µs – 0.7 – µs – 1.7 – µs – 0.1 – µs – 0.2 – µs Turn–On Time ton Storage Time NTE2534 tstg VCC = 50V, 10IB1 = –10IB2 = IC = 5A, Pulse Width = 20µs, Duty Cycle ≤ 1%, Note 1 NTE2535 Fall Time NTE2534 tf NTE2535 Note 1. For NTE2535, the polarity is reversed. .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C/ Case E .215 (5.47)