SW7N65D

SW7N65D
N-channel Enhancement mode TO-220/TO-251/TO-252/TO-220F MOSFET
TO-220
Features






TO-251
BVDSS : 650V
TO-220F
TO-252
: 7A
ID
High ruggedness
RDS(ON) (Typ 1.1Ω)@VGS=10V
Gate Charge (Typ 30nC)
Improved dv/dt Capability
1
100% Avalanche Tested
2
3
Application: Charger,TV-POWER
RDS(ON) : 1.1Ω
1
2
1
3
2
1
3
2
2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
3
Order Codes
Item
1
2
3
4
Sales Type
SW P 7N65D
SW I 7N65D
SW D 7N65D
SW F 7N65D
Marking
SW7N65D
SW7N65D
SW7N65D
SW7N65D
Package
TO-220
TO-251
TO-252
TO-220F
Packaging
TUBE
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220 TO-251 TO-252 TO-220F
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC
=100oC)
Unit
650
V
7*
A
4.4*
A
28
A
±30
V
IDM
Drain current pulsed
VGS
Gate to Source Voltage
EAS
Single pulsed Avalanche Energy
(note 2)
430
mJ
EAR
Repetitive Avalanche Energy
(note 1)
40
mJ
(note 3)
5
V/ns
dv/dt
PD
TSTG, TJ
TL
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC
Derating Factor above
=25oC)
25oC
208.3
173.6
27.9
W
1.67
1.39
0.22
W/oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
oC
300
oC
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-220 TO-251 TO-252 TO-220F
Rthjc
Thermal resistance, Junction to case
0.6
Rthcs
Thermal resistance, Case to Sink
0.5
Rthja
Thermal resistance, Junction to ambient
60
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
0.72
0.5
/
82
Unit
4.5
oC/W
0.5
oC/W
50
oC/W
Oct. 2015. Rev. 4.0
1/6
SW7N65D
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
650
V
V/oC
0.51
VDS=650V, VGS=0V
1
uA
VDS=520V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.5
V
1.4
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 3.5A
1.1
Forward Transconductance
VDS = 30 V, ID = 3.5A
6.3
Gfs
2.5
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
16
td(on)
Turn on delay time
16
tr
td(off)
tf
Qg
Rising time
Turn off delay time
950
VGS=0V, VDS=25V, f=1MHz
108
pF
36
VDS=350V, ID=7A, RG=25Ω
(note 4,5)
ns
83
Fall time
40
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
30
VDS=520V, VGS=10V, ID=7A
(note 4,5)
nC
5
15
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
7
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
28
A
VSD
Diode forward voltage drop.
IS=7A, VGS=0V
1.4
V
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
IS=7A, VGS=0V,
dIF/dt=100A/us
IS
Continuous source current
ISM
436
ns
8.7
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 17.5mH, IAS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
2/6
SW7N65D
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
3/6
SW7N65D
Fig. 7. Maximum safe operating area(TO-220)
Fig. 9. Maximum safe operating area(TO-251/252)
Fig. 11. Maximum safe operating area(TO-220F)
Fig. 8. Transient thermal response curve(TO-220)
Fig. 10. Transient thermal response curve(TO251/252)
Fig. 12. Transient thermal response curve(TO-220F)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
4/6
SW7N65D
Fig. 13. Capacitance Characteristics
Fig. 14. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
2.2mA
Charge
nC
Fig. 15. Switching time test circuit & waveform
VDS
RL
RGS
VDS
VDD
VIN
10VIN
90%
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
Oct. 2015. Rev. 4.0
5/6
SW7N65D
Fig. 16. Unclamped Inductive switching test circuit & waveform
Fig. 17. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIRATION:
* All the data&curve within this document was tested in XI’AN SEMIPOWER TESTING&APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification Standards can also be found on the Web site (http://www.semipower.com.cn)
* Any advice, please send your proposal to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
6/6