SW85N03C

SW85N03C
N-channel Enhancement mode TO-251 MOSFET
Features






BVDSS : 30V
TO-251
ID
High ruggedness
RDS(ON) (Typ 4.9mΩ)@VGS=10V
Gate Charge (Typ 62.3nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC,Motor Control
: 85A
RDS(ON) : 4.9mΩ
2
1
2 3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW I 85N03C
SW85N03C
TO-251
TUBE
Value
Unit
Drain to Source Voltage
30
V
Continuous Drain Current (@TC=25oC)
85*
A
Continuous Drain Current (@TC=100oC)
53.5*
A
340
A
±20
V
Absolute maximum ratings
Symbol
VDSS
ID
Parameter
IDM
Drain current pulsed
VGS
Gate to Source Voltage
EAS
Single pulsed Avalanche Energy
(note 2)
195
mJ
EAR
Repetitive Avalanche Energy
(note 1)
20
mJ
(note 3)
5
V/ns
89
W
0.7
W/oC
-55 ~ + 150
oC
300
oC
Value
Unit
dv/dt
PD
TSTG, TJ
TL
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC
=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc
Thermal resistance, Junction to case
1.4
oC/W
Rthcs
Thermal resistance, Case to Sink
0.5
oC/W
Rthja
Thermal resistance, Junction to ambient
80
oC/W
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Oct. 2015. Rev. 2.0
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SW85N03C
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
30
V
V/oC
0.01
VDS=30V, VGS=0V
1
uA
VDS=24V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=20V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-20V, VDS=0V
-100
nA
2.4
V
5.8
mΩ
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID =40A
4.9
Forward Transconductance
VDS = 8V, ID = 40A
82
Gfs
1.2
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
320
td(on)
Turn on delay time
14
tr
td(off)
tf
Qg
Rising time
Turn off delay time
2986
VGS=0V, VDS=25V, f=1MHz
326
pF
59
VDS=15V, ID=14A, RG=25Ω
(note 4，5)
nS
193
Fall time
96
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
62
VDS=25V, VGS=10V, ID=14A
(note 4，5)
8
nC
18
Source to drain diode ratings characteristics
Symbol
Parameter
IS
Continuous source current
ISM
Test conditions
Min.
Typ.
Max.
Unit
85
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
340
A
VSD
Diode forward voltage drop.
IS=20A, VGS=0V
1.4
V
Trr
Reverse recovery time
Qrr
Breakdown voltage charge
IS=14A, VGS=0V,
dIF/dt=100A/us
15.5
nS
5.5
nC
Oct. 2015. Rev. 2.0
2/6
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =0.4mH, IAS = 30A, VDD = 20V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 14A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW85N03C
Fig. 1. On-state characteristics
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
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Oct. 2015. Rev. 2.0
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SW85N03C
Fig. 7. Maximum safe operating area
Fig. 8. Transient thermal response curve
Fig. 9. Capacitance Characteristics
Fig. 10. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGS
QGD
DUT
VGS
3mA
Charge
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
nC
Oct. 2015. Rev. 2.0
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SW85N03C
Fig. 11. Switching time test circuit & waveform
VDS
90%
RL
RGS
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
td(off)
tr
tON
tf
tOFF
Fig. 12. Unclamped Inductive switching test circuit & waveform
Fig. 13. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
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SW85N03C
DISCLAIRATION:
* All the data&curve within this document was tested in XI’AN SEMIPOWER TESTING&APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification Standards can also be found on the Web site (http://www.semipower.com.cn)
* Any advice, please send your proposal to [email protected]
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Oct. 2015. Rev. 2.0
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