SW10N50K

SW10N50K
N-channel Enhanced mode TO-220F/TO-220/TO-247 MOSFET
Features






TO-220F
TO-220
BVDSS : 500V
TO-247
ID
High ruggedness
Low RDS(ON) (Typ 0.26Ω)@VGS=10V
Low Gate Charge (Typ 29nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:LED, PC Power, Charge
: 10A
RDS(ON) : 0.26Ω
2
1
2
1
3
2
1
3
2
3
1. Gate 2. Drain 3. Source
General Description
1
3
This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SWF10N50K
SW10N50K
TO-220F
TUBE
2
SWP10N50K
SW10N50K
TO-220
TUBE
3
SWA10N50K
SW10N50K
TO-247
TUBE
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220F
VDSS
ID
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current
(@TC=100oC)
TO-220
TO-247
500
V
10*
A
6.3*
A
40
A
±30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
367.5
mJ
EAR
Repetitive avalanche energy
(note 1)
50
mJ
dv/dt
Peak diode recovery dv/dt
(note 3)
5
V/ns
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
41.6
186.6
171.2
W
Derating factor above 25oC
0.33
1.5
1.4
W/oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
-55 ~ + 150
oC
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-220F
TO-220
TO-247
Unit
Rthjc
Thermal resistance, Junction to case
3
0.67
0.73
oC/W
Rthja
Thermal resistance, Junction to ambient
52
60
37
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2015. Rev. 2.0
1/7
SW10N50K
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
IGSS
500
V
V/oC
0.57
VDS=500V, VGS=0V
1
uA
VDS=400V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4
V
0.3
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=5A
0.26
Forward transconductance
VDS=30V, ID=5A
7.2
Gfs
2
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td(on)
Turn on delay time
tr
td(off)
tf
Qg
Rising time
Turn off delay time
1080
VGS=0V, VDS=200V, f=1MHz
52
pF
2
12
VDS=250V, ID=10A, RG=25Ω,
VGS=10V
(note 4,5)
32
ns
75
Fall time
29
29
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Rg
Gate resistance
VDS=400V, VGS=10V, ID=10A
(note 4,5)
5
nC
14
VDS=0V, Scan F mode
Ω
1.0
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=10A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=10A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
10
A
40
A
1.4
V
278
ns
3.5
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 60mH, IAS = 3.5A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2015. Rev. 2.0
2/7
SW10N50K
Fig. 1. On-state characteristics
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2015. Rev. 2.0
3/7
SW10N50K
Fig. 7. Maximum safe operating area（TO-220F）
Fig. 8. Maximum safe operating area（TO-220）
Fig. 9. Maximum safe operating area（TO-247）
Fig. 10. Capacitance Characteristics
Fig. 11. Transient thermal response curve（TO-220F）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2015. Rev. 2.0
4/7
SW10N50K
Fig. 12. Transient thermal response curve（TO-220）
Fig. 13. Transient thermal response curve（TO-247）
Fig. 14. Gate charge test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2015. Rev. 2.0
5/7
SW10N50K
Fig. 15. Switching time test circuit & waveform
VDS
90%
RL
RGS
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
td(off)
tr
tON
tf
tOFF
Fig. 16. Unclamped Inductive switching test circuit & waveform
Fig. 17. Peak diode recovery dv/dt test circuit & waveform
DU
T
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse
period
Diode recovery dv/dt
VDS (DUT)
VF
VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2015. Rev. 2.0
6/7
SW10N50K
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2015. Rev. 2.0
7/7