RFP6P08, RFP6P10 Data Sheet October 1999 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs • -6A, -80V and -100V Formerly developmental type TA09046. • rDS(ON) = 0.600Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Ordering Information PACKAGE 1490.2 Features These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. PART NUMBER File Number • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND RFP6P08 TO-220AB RFP6P08 RFP6P10 TO-220AB RFP6P10 Symbol NOTE: When ordering, include the entire part number. D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP6P08, RFP6P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFP6P08 80 80 RFP6P10 100 100 UNITS V V 6 20 ±20 60 0.48 -55 to 150 6 20 ±20 60 0.48 -55 to 150 A A V W W/oC oC 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFP6P08 -80 - - V RFP6P10 -100 - - V VGS = VDS , ID = 250µA (Figure 7) -2 - -4 V VDS = Rated BVDSS - - 1 µA VDS = 0.8 x Rated BVDSS (TC = 125oC) - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0V Drain to Source On Resistance (Note 2) rDS(ON) ID = 6A, VGS = -10V (Figures 5, 6) - - 0.6 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 6A, VGS = -10V - - -3.6 V td(ON) VDD = 50V, ID ≈ 6A RG = 50Ω, RL = 16Ω VGS = -10V (Figures 13, 14) - 11 60 ns - 48 100 ns - 102 150 ns - 70 100 ns - - 800 pF - - 350 pF - - 150 pF Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case RθJC VDS = 25V VGS = 0V f = 1MHz (Figure 8) - - 2.083 oC/W MIN TYP MAX UNITS ISD = -3A - - -1.4 V ISD = 4A, dlSD/dt = 50A/µs - 150 - ns RFP6P08, RFP6P10 Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse Test: Pulse Duration ≤ 300µs max, Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 2 RFP6P08, RFP6P10 Typical Performance Curves -8 -7 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0 -6 -5 -4 -3 -2 -1 0 50 100 0 25 150 50 75 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 30 ID MAX CONTINUOUS DC 1 VDS(MAX) = -100V RFP8P10 VDS(MAX) = -80V RFP8P08 0.1 -1 20 10 VGS = -5V 0 0 -1000 3 4 5 6 7 8 9 10 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS VGS = 10V PULSE DURATION = 80µs TC = 25oC TC = 125oC 6 4 2 125oC 0.6 ON RESISTANCE rDS(ON) , DRAIN TO SOURCE 0.7 12 8 2 1 0.8 10 VGS = -7V VGS = -4V VGS = -6V TC = -40oC PULSE DURATION = 80µs VGS = -10V VGS = -8V 15 16 14 VGS = -20V 5 -10 -100 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS = 10V 150 VGS = -9V FIGURE 3. FORWARD BIAS SAFE OPERATING AREA IDS(ON) , DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 80µs TC = 25oC 25 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 10 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TJ = MAX RATED TC = 25oC OPERATION IN THIS AREA LIMITED BY rDS(ON) 100 TC, CASE TEMPERATURE (oC) 25oC 0.5 0.4 -40oC 0.3 0.2 0.1 0 0 0 -4 -6 -8 -2 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 -10 0 2 4 8 12 6 10 14 ID , DRAIN CURRENT (A) 16 18 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 20 RFP6P08, RFP6P10 Typical Performance Curves (Continued) 3 1.5 ID = 250µA VGS = -10V NORMALIZED GATE THRESHOLD VOLTAGE VGS = -10V 2 1 0 -50 50 100 150 0 TJ , JUNCTION TEMPERATURE (oC) 0.5 0 -50 200 0 50 100 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 800 600 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 700 CISS 500 400 300 COSS 200 CRSS 100 10 BVDSS 75 GATE TO SOURCE VOLTAGE VDD = BVDSS 8 VDD = BVDSS RL = 16.67Ω IG (REF) = 0.46mA VGS = -10V 50 6 4 0.75BVDSS 0.50BVDSS 0.25BVDSS 25 2 DRAIN TO SOURCE VOLTAGE 0 0 0 200 150 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) 1 -10 -20 -30 -40 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 6A 0 I (REF) 20 G IG (ACT) -50 t, TIME (ms) I (REF) 80 G IG (ACT) NOTE: Refer to Intersil Applications Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS 0 - RG + 0V VGS DUT tP IAS VDD IAS VDS tP 0.01Ω FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT 4 VDD BVDSS FIGURE 12. UNCLAMPED ENERGY WAVEFORMS RFP6P08, RFP6P10 Test Circuits and Waveforms (Continued) tON tOFF td(OFF) td(ON) tf tr 0 RL - DUT VGS VDD RG + 10% 10% VDS VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 13. SWITCHING TIME TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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