VSMF2893RGX01, VSMF2893GX01 Datasheet

VSMF2893RGX01, VSMF2893GX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
FEATURES
• Package type: surface mount
VSMF2893RGX01
• Package form: GW, RGW
VSMF2893GX01
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• Peak wavelength: p = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
DESCRIPTION
• Package matches with detector VEMD2xx3X01 and
VEMT2xx3X01 series
VSMF2893X01 series are infrared, 890 nm emitting diodes
in GaAlAs (DH) technology with high radiant power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• 3D TV
• IR touch panels
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
PRODUCT SUMMARY
Ie (mW/sr)
 (deg)
p (nm)
VSMF2893RGX01
20
± 25
890
30
VSMF2893GX01
20
± 25
890
30
COMPONENT
tr (ns)
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMF2893RGX01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMF2893GX01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
Rev. 1.0, 26-Feb-13
Document Number: 83484
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893RGX01, VSMF2893GX01
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp  100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
1
A
PV
160
mW
Power dissipation
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
Acc. figure 9, J-STD-020
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
250
K/W
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
100
Tamb - Ambient Temperature (°C)
0
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.25
1.4
1.6
V
IF = 1 A, tp = 100 μs
VF
2.3
V
IF = 1 mA
TKVF
- 1.8
mV/K
IF = 100 mA
TKVF
- 1.1
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
IF = 100 mA, tp = 20 ms
Ie
mV/K
10
μA
30
mW/sr
125
10
20
pF
IF = 1 A, tp = 100 μs
Ie
180
mW/sr
IF = 100 mA, tp = 20 ms
e
40
mW
IF = 100 mA
TKe
- 0.35
%/K

± 25
Angle of half intensity
deg
Peak wavelength
IF = 30 mA
p
Spectral bandwidth
IF = 30 mA

40
nm
Temperature coefficient of p
IF = 30 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
30
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
30
ns
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
Cut-off frequency
Rev. 1.0, 26-Feb-13
870
890
910
nm
Document Number: 83484
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893RGX01, VSMF2893GX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified)
1.25
Φe rel - Relative Radiant Power
100
tp = 100 µs
tp/T = 0.001
10
1.0
0.75
0.5
0.25
1
0
1
2
3
0
800
4
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
110
VF, rel - Relative Forward Voltage (%)
1000
900
λ - Wavelength (nm)
20082
VF - Forward Voltage (V)
18873_1
10°
20°
30°
Ie rel - Relative Radiant Intensity
108
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
IF - Forward Current (mA)
1000
80°
90
- 40
- 20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
21443
0.6
0.4
0.2
0
22694
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
0.02
100
10
1
0.1
0.001
0.01
0.1
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.0, 26-Feb-13
Tamb < 50 °C
tp/T = 0.01
1000
tp = 100 µs
IF - Forward Current (mA)
Ie - Radiant Intensity (mW/sr)
1000
1
0.05
0.1
0.2
0.5
100
0.01
16031
0.1
1
10
100
tp - Pulse Duration (ms)
Fig. 8 - Pulse Forward Current vs. Pulse Duration
Document Number: 83484
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893RGX01, VSMF2893GX01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
FLOOR LIFE
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMF2893RGX01
Rev. 1.0, 26-Feb-13
Document Number: 83484
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893RGX01, VSMF2893GX01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMF2893GX01
Rev. 1.0, 26-Feb-13
Document Number: 83484
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893RGX01, VSMF2893GX01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMF2893RGX01
Rev. 1.0, 26-Feb-13
Document Number: 83484
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMF2893RGX01, VSMF2893GX01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMF2893GX01
Rev. 1.0, 26-Feb-13
Document Number: 83484
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000