VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH FEATURES • Package type: surface mount VSMF288011RGX01 VSMF288011GX01 • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 11° • Low forward voltage • Suitable for high pulse current operation DESCRIPTION • Terminal configurations: gullwing or reserve gullwing VSMF288011RG(G)X01 series are infrared, 890 nm emitting diodes in GaAlAs (DH) technology with high radiant power, high speed and typical receiving characteristics. VSMF288011RG(G)X01 is molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Package matches with detector VEMD2000X01 series • Floor life: 4 weeks, MSL 2a, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Metering PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMF288011RGX01 36 ± 11 890 50 VSMF288011GX01 36 ± 11 890 50 COMPONENT Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF288011RGX01 VSMF288011GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity Rev. 1.0, 01-Dec-15 Document Number: 84254 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 190 mW Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Acc. figure 9, J-STD-020 Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB Tj 100 °C Tamb -40 to +85 °C Tstg -40 to +100 °C Tsd 260 °C RthJA 250 K/W 100 180 IF - Forward Current (mA) PV - Power Dissipation (mW) 200 160 140 120 100 80 RthJA = 250 K/W 60 40 80 60 40 RthJA = 250 K/W 20 20 0 0 0 20 40 60 80 0 100 20 40 60 80 100 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Reverse light current Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.6 1.9 V IF = 200 mA, tp = 100 μs VF - 1.9 2.5 V IF = 100 mA TKVF - -1.1 - mV/K μA VR = 5 V IR - - 10 VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 65 - pF IF = 100 mA, tp = 20 ms Ie 18 36 70 mW/sr Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V Ira - 6.4 - μA IF = 100 mA, tp = 20 ms φe - 30 - mW IF = 100 mA TKφe - -0.35 - %/K ϕ - ± 11 - deg Angle of half intensity Peak wavelength IF = 100 mA λp 870 890 910 nm Spectral bandwidth IF = 100 mA Δλ - 40 - nm Temperature coefficient of λp IF = 100 mA TKλp - 0.33 - nm/K Rise time IF = 100 mA, 20 % to 80 % tr - 50 - ns Fall time IF = 100 mA, 20 % to 80 % tf - 50 - ns Rev. 1.0, 01-Dec-15 Document Number: 84254 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) 1000 Φe - Radiant Power (mW) tp = 20 ms 100 10 tp = 20 ms 100 10 1 0.1 1.2 1.4 1.6 1.8 2.0 10 VF - Forward Voltage (V) IF = 100 mA tp = 20 ms 105 100 95 90 0 20 40 60 80 Fig. 6 - Radiant Power vs. Forward Current Ie, rel - Relative Radiant Intensity (%) VF, rel - Relative Forward Voltage (%) 115 -60 -40 -20 100 IF = 100 mA 90 80 70 60 50 40 30 20 10 0 750 100 800 850 900 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature 0° tp = 20 ms Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 1000 Fig. 7 - Relative Radiant Power vs. Wavelength 1000 100 10 1 100 950 λ - Wavelength (nm) Tamb - Ambient Temperature (°C) 10 1000 IF - Forward Current (mA) Fig. 3 - Forward Current vs. Forward Voltage 110 100 1000 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement IF - Forward Current (mA) 1000 0 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.0, 01-Dec-15 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84254 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. S( λ ) rel - Relative Spectral Sensitivity 1.25 1 FLOOR LIFE 0.75 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 0.5 Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % 0.25 Moisture sensitivity level 2a, acc. to J-STD-020. 0 800 820 840 860 880 900 920 940 960 980 1000 λ - Wavelength (nm) 20420 Fig. 9 - Relative Spectral Sensitivity vs. Wavelength DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. SOLDER PROFILE 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.0, 01-Dec-15 Document Number: 84254 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMF288011RGX01 Ø 1.8 ± 0.1 0.3 Z 1.6 0.19 2.77 ± 0.2 0.05 ± 0.1 0.4 2.2 2.2 5.8 ± 0.2 Z 20:1 1.1 ± 0.1 Exposed copper 0.254 0.5 2.3 ± 0.2 0.4 2.3 ± 0.2 Pin ID Anode 1.7 Cathode 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.03-4 Issue: 1; 18.03.10 22100 Rev. 1.0, 01-Dec-15 Document Number: 84254 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMF288011GX01 Ø 1.8 2.2 0.19 1.6 X 0.05 2.77 ± 0.2 0.3 0.4 2.2 4.2 ± 0.2 Exposed copper X 20:1 0.6 Anode 0.75 0.254 0.5 2.3 ± 0.2 0.4 2.3 ± 0.2 Pin ID Cathode technical drawings according to DIN specifications Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.03-4 Issue: 1; 18.03.10 22099 Rev. 1.0, 01-Dec-15 Document Number: 84254 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMF288011RGX01 Rev. 1.0, 01-Dec-15 Document Number: 84254 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF288011RGX01, VSMF288011GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMF288011GX01 Rev. 1.0, 01-Dec-15 Document Number: 84254 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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