VSMB294008RG, VSMB294008G Datasheet

VSMB294008RG, VSMB294008G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
VSMB294008RG
VSMB294008G
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
DESCRIPTION
• Angle of half intensity:  = ± 7°
VSMB294008 series are infrared, 940 nm emitting diodes in
GaAlAs multi quantum well (MQW) technology with high
radiant power and high speed, molded in clear, untinted
plastic packages (with lens) for surface mounting (SMD).
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2000X01 series
APPLICATIONS
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Data transmission
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Miniature light barrier




• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
PRODUCT SUMMARY
Ie (mW/sr)
 (deg)
P (nm)
tr (ns)
VSMB294008RG
70
±7
940
15
VSMB294008G
70
±7
940
15
COMPONENT
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB294008RG
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMB294008G
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5
V
Forward current
IF
100
mA
IFSM
500
mA
PV
160
mW
°C
Surge forward current
tp = 100 μs
Power dissipation
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
according to fig. 10, J-STD-020
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
250
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.1, 19-Nov-14
Document Number: 84228
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB294008RG, VSMB294008G
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Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
0
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.15
1.45
1.75
UNIT
V
IF = 500 mA, tp = 100 μs
VF
-
1.8
-
V
IF = 100 mA
TKVF
-
-0.64
-
mV/K
VR = 5 V
IR
-
-
10
μA
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
-
38
-
pF
IF = 100 mA, tp = 100 μs
Ie
30
70
115
mW/sr
IF = 500 mA, tp = 100 μs
Ie
-
260
-
mW/sr
IF = 100 mA, tp = 100 μs
e
-
40
-
mW
IF = 100 mA
TKe
-
-0.43
-
%/K

-
±7
-
deg
Peak wavelength
IF = 30 mA
p
920
940
960
nm
Spectral bandwidth
IF = 30 mA

-
25
-
nm
Radiant power
Temperature coefficient
of radiant power
Angle of half intensity
Temperature coefficient of p
IF = 30 mA
TKp
-
0.25
-
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
-
15
-
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
-
15
-
ns
IDC = 70 mA, IAC = 30 mA pp
fc
-
23
-
MHz
Cut-off frequency
Rev. 1.1, 19-Nov-14
Document Number: 84228
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB294008RG, VSMB294008G
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
tp = 100 μs
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
1000
tp = 100 μs
100
10
100
10
1
1
0.1
1.0
1.2
1.4
1.6
1.8
2.0
1
VF - Forward Voltage (V)
IF = 100 mA
tp = 20 ms
1.43
1.41
1.39
1.37
1.35
0
20
40
60
80
130
IF = 100 mA
tp = 20 ms
120
110
100
90
80
70
60
-50
100
Tamb - Ambient Temperature (°C)
-25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 7 - Radiant Intensity vs. Ambient Temperature
105
100
Φe rel - Relative Radiant Power (%)
VF, rel - Relative Forward Voltage (%)
1000
Fig. 6 - Radiant Intensity vs. Forward Current
Ie, rel - Relative Radiant Intensity (%)
VF - Forward Voltage (V)
1.47
-60 -40 -20
100
IF - Forward Current (mA)
Fig. 3 - Forward Current vs. Forward Voltage
1.45
10
IF = 100 mA
tp = 20 ms
103
101
99
97
-60 -40 -20
0
20
40
60
80
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.1, 19-Nov-14
80
21445
IF = 30 mA
70
60
50
40
30
20
10
0
840
100
Tamb - Ambient Temperature (°C)
90
880
920
960
1000
1040
λ - Wavelength (nm)
Fig. 8 - Relative Radiant Power vs. Wavelength
Document Number: 84228
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB294008RG, VSMB294008G
www.vishay.com
0°
Vishay Semiconductors
10°
DRYPACK
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.4
0.6
0.2
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label: 
Floor life: 4 weeks 
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
0
λ - Wavelength (nm)
250
ϕ - Angular Displacement
Ie, rel - Relative Radiant Intensity
30°
200
250
300
Time (s)
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
















Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.1, 19-Nov-14
Document Number: 84228
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB294008RG, VSMB294008G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMB294008RG
0.3
Ø 1.8 ± 0.1
Z
1.6
0.19
2.77 ± 0.2
0.05 ± 0.1
0.4
2.2
2.2
5.8 ± 0.2
Z 20:1
1.1 ± 0.1
0.4
0.5
2.3 ± 0.2
0.254
exposed copper
2.3 ± 0.2
Cathode
Pin ID
1.7
Anode
0.75
Solder pad proposal
acc. IPC 7351
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.02-4
Issue: 2; 18.03.10
21517
Rev. 1.1, 19-Nov-14
Document Number: 84228
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB294008RG, VSMB294008G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMB294008G
Ø 1.8
2.77 ± 0.2
0.3
0.4
0.19
0.05
1.6
X
2.2
2.2
4.2 ± 0.2
X 20:1
exposed copper
0.6
Cathode
0.254
2.3 ± 0.2
0.4
0.5
2.3 ± 0.2
Anode
Pin ID
technical drawings
according to DIN
specifications
0.75
Solder pad proposal
acc. IPC 7351
Not indicated tolerances ± 0.1
2.45
5.15
Drawing-No.: 6.544-5383.02-4
Issue: 4; 18.03.10
21488
Rev. 1.1, 19-Nov-14
Document Number: 84228
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB294008RG, VSMB294008G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB294008RG
Unreel direction
X
2.
Ø 62 ± 0.5
Reel
0
5±
Ø
13
±
0.5
Ø 330 ± 1
.5
Tape position
coming out from reel
6000 pcs/reel
Label posted here
Technical drawings
according to DIN
specifications
12.4 ± 1.5
Leader and trailer tape:
Empty (160 mm min.)
Parts mounted
Direction of pulling out
Device
Lead I
Lead II
Collector
Emitter
Cathode
Anode
Anode
Cathode
Ø 1.55 ± 0.05
I
VEMT2000
VEMT2500
X 2:1
4 ± 0.1
2 ± 0.05
VEMD2000
5.5 ± 0.05
VEMD2500
VSMB2000
VSMG2000
VSMY2850RG
3.05 ± 0.1
II
12 ± 0.3
Terminal position in tape
1.75 ± 0.1
Empty (400 mm min.)
4 ± 0.1
Drawing-No.: 9.800-5100.01-4
Issue: 2; 18.03.10
21572
Rev. 1.1, 19-Nov-14
Document Number: 84228
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB294008RG, VSMB294008G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB294008G
Reel
X
Unreel direction
5±
Ø 62 ± 0.5
2.
Ø
13
±
0.5
Ø 330 ± 1
0.5
Tape position
coming out from reel
6000 pcs/reel
Label posted here
technical drawings
according to DIN
specifications
12.4 ± 1.5
Leader and trailer tape:
Empty (160 mm min.)
Parts mounted
Direction of pulling out
Ø 1.55 ± 0.05
Device
Lead I
Lead II
Collector
Emitter
Cathode
Anode
Anode
Cathode
I
VEMT2020
VEMT2520
X 2:1
4 ± 0.1
2 ± 0.05
VSMB2020
VEMD2020
VEMD2520
VSMY2850G
3.05 ± 0.1
II
4 ± 0.1
5.5 ± 0.05
VSMG2020
12 ± 0.3
Terminal position in tape
1.75 ± 0.1
Empty (400 mm min.)
Drawing-No.: 9.800-5091.01-4
Issue: 3; 18.03.10
21571
Rev. 1.1, 19-Nov-14
Document Number: 84228
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000